Quantum confinement effect of nanocrystalline GaN films prepared by pulsed-laser ablation under various Ar pressures

Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 273-276

  Yoon, Jong Won ^a   Sasaki, Takeshi ^a   Roh, Cheong Hyun ^b   Shim, Seung Hwan ^b   Shim, Kwang Bo ^b   Koshizaki, Naoto ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Hanyang University   (South Korea)

Author keywords

Laser ablation; Nanocrystalline materials; Optical properties

Indexed keywords

ANNEALING; ARGON; ELECTRON DIFFRACTION; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PULSED LASER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GAN FILMS; GAN POWDERS; NANOPARTICLES; QUANTUM CONFINEMENT;

THIN FILMS;

EID: 10644262352     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.123     Document Type: Article

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