Influence of passivation layers on characteristics of a-InGaZnO thin-film transistors

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 161-163

  Liu, Shou En ^a,b   Yu, Ming Jiue ^a   Lin, Chang Yu ^a   Ho, Geng Tai ^a   Cheng, Chun Cheng ^a   Lai, Chih Ming ^a   Lin, Chrong Jung ^b   King, Ya Chin ^b   Yeh, Yung Hui ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Amorphous InGaZnO; passivation layer; thin film transistor

Indexed keywords

DEPOSITION; PASSIVATION; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE;

AMORPHOUS INGAZNO; DEPOSITION PARAMETERS; FIELD-EFFECT MOBILITIES; MECHANICAL STRESS; ON-OFF RATIO; PASSIVATION LAYER; PASSIVATION PROCESS; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 79151481861     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2091620     Document Type: Article

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