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Volumn 10, Issue 10, 2010, Pages 4638-4641

Composition controlled superlattice InGaO3(ZnO)m thin films by thickness of ZnO buffer layers and thermal treatment

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ANNEALING TIME; AS-GROWN FILMS; CRYSTAL PHASIS; ELECTRICAL RESISTIVITY; QUANTUM CONFINEMENT EFFECTS; SAPPHIRE SUBSTRATES; SUPER-LATTICE STRUCTURES; THERMAL TREATMENT; THERMOELECTRIC APPLICATION; THERMOELECTRIC PROPERTIES; ZNO; ZNO BUFFER LAYER;

EID: 77957715262     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg100924a     Document Type: Conference Paper
Times cited : (15)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.