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Volumn 605, Issue 23-24, 2011, Pages 2073-2081

Structure of the In-rich InAs (001) surface

Author keywords

Atomic force microscopy; Density functional theory, Surface structure calculations; III V semiconductors, surface structure; Scanning tunneling microscopy

Indexed keywords

ATOMIC ROWS; CRYOGENIC TEMPERATURES; CRYSTALLOGRAPHIC DIRECTIONS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DIFFERENT STRUCTURE; II-IV SEMICONDUCTORS; INAS; INDIUM ATOMS; ORIGINAL MODEL; ROOM TEMPERATURE;

EID: 80053561548     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.08.008     Document Type: Article
Times cited : (18)

References (24)
  • 24
    • 80053568436 scopus 로고    scopus 로고
    • The "In-rich" or "In-terminated" are conventional names that are used for surfaces prepared in element III deficient conditions - they do not necessarily reflect the real enrichment in the In component
    • The "In-rich" or "In-terminated" are conventional names that are used for surfaces prepared in element III deficient conditions - they do not necessarily reflect the real enrichment in the In component.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.