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Volumn 576, Issue 1-3, 2005, Pages 123-130

Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(0 0 1) epitaxial surfaces

Author keywords

HRUPS; InAs; Surface states

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; BINDING ENERGY; CRYSTAL ORIENTATION; DIMERS; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE PROPERTIES; SURFACE TREATMENT; ULTRAVIOLET SPECTROSCOPY;

EID: 12544260415     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.12.004     Document Type: Article
Times cited : (12)

References (26)
  • 12
    • 0001564618 scopus 로고    scopus 로고
    • C. Kumpf, L.D. Marks, D. Ellis, D. Smilgies, E. Landemark, M. Nielsen, R. Feidenhans'l, J. Zegenhagen, O. Bunk, J.H. Zeysing, Y. Su, and R.L. Johnson Phys. Rev. Lett. 86 2001 3686; Phys. Rev. B 64 2001 075307
    • (2001) Phys. Rev. B , vol.64 , pp. 075307
  • 20
    • 12544251364 scopus 로고    scopus 로고
    • Data to be published
    • Data to be published


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.