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Journal of Materials Chemistry

Volumn 21, Issue 40, 2011, Pages 15889-15894

A continuous process for Si nanowires with prescribed lengths

(3) Kim, Jungkil a,b Rhu, Hyun a Lee, Woo a,b

a Korea Research Institute of Standards and Science (South Korea)

b University of Science and Technology (UST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC BIAS; BOTTOM UP METHODS; CHEMICAL ETCHING; CONTINUOUS PROCESS; POROUS SEGMENTS; SI NANOWIRE; SILICON SUBSTRATES; SINGLE CRYSTALLINE SILICON; TOP-DOWN APPROACH; ULTRASONIC TREATMENTS;

POROUS SILICON;

NANOWIRES;

EID: 80053546644 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm13831f Document Type: Article

Times cited : (27)

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