Spin torque based magnetic content addressable memory

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Wang, Weizhong ^a   Jiang, Zhenye ^a  

^a University of Wisconsin Milwaukee   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL ARCHITECTURES; CONTENT-ADDRESSABLE MEMORIES; CROSS-BARS; FEASIBILITY STUDIES; MAGNETIC LAYERS; MAGNETIC TUNNELING JUNCTIONS; MAGNETIZATION ORIENTATIONS; MICRO-MAGNETIC SIMULATIONS; NONMAGNETIC LAYERS; PINNED LAYERS; PROGRAMMING CURRENTS; SERIES RESISTANCES; SPIN TORQUE TRANSFERS; SPIN TORQUES; SWITCHING FIELDS; SYNTHETIC ANTIFERROMAGNETIC; TUNNELING BARRIERS;

ANTIFERROMAGNETISM; ASSOCIATIVE STORAGE; MAGNETIC RECORDING; PLANNING; RESOURCE ALLOCATION; SPIN DYNAMICS; TORQUE; WAVEGUIDE JUNCTIONS;

MAGNETS;

EID: 65249152063     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3070618     Document Type: Article

References (8)

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