Beyond MRAM, CMOS/MTJ integration for logic components

IEEE Transactions on Magnetics

Volumn 45, Issue 10, 2009, Pages 3400-3405

  Prenat, Guillaume ^a   Dieny, Bernard ^a   Guo, Wei ^a   Baraji, Mourad El ^a,b   Javerliac, Virgile ^b   Nozières, Jean Pierre ^b  

^a CEA GRENOBLE   (France)

^b CROCUS Technology   (France)

Author keywords

BSIM; Compact modeling; FPGA; Hybrid CMOS magnetic; Low power design; Magnetic random access memory (MRAM); Magnetic tunnel junctions (MTJ); SPICE

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; DEGREES OF FREEDOM (MECHANICS); ELECTRIC POWER SUPPLIES TO APPARATUS; FIELD PROGRAMMABLE GATE ARRAYS (FPGA); HYBRID MATERIALS; INTEGRATED CIRCUIT DESIGN; LOGIC DEVICES; MAGNETIC MATERIALS; MAGNETIC RECORDING; MAGNETISM; MEMORY ARCHITECTURE; MRAM DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; SPICE; TUNNEL JUNCTIONS;

BSIM; COMPACT MODEL; HYBRID CMOS; LOW-POWER DESIGN; MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC TUNNEL JUNCTION;

MAGNETIC STORAGE;

EID: 70350596712     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2009.2025257     Document Type: Article

References (22)

1. S. Tehrani, "Magnetoresistive random access memory using magnetic tunnel junctions," Proc. IEEE, vol.91, pp. 3703-3714, May 2003.
2. T. W. Andre, J. J. Nahas, C. K. Subramanian, B. J. Garni, H. S. Lin, A. Omair, and W. L. Martino, "A 4-mb 0.18-μm 1t-1mtj toggle mram with balanced three input sensing scheme and locally mirrored unidirectional write drivers," IEEE J. Solid State Circuits, vol.23, no.1, pp. 301-309, 2005.
3. S. Brown, Field-Programmable Gate Arrays. Norwell: Kluwer, 1992.
4. W. Zhao, E. Belhaire, V. Javerliac, C. Chappert, and B. Dieny, "Evaluation of a non-volatile fpga based on mram technology," in Proc. IEEE Int. Conf. Integr. Circuit Design Technol., 2006.
5. S. G. Narendra and A. Chandrakasan, Eds., Leakage in Nanometer CMOS Techologies. Berlin: Springer-Verlag, 2006.
6. Nonvolatile Logic Memory With Zero Standby Power Consumption, [Online]. Available: http://www.rohm.com/, [Online]. Available:
7. W. Zhao, E. Belhaire, V. Javerliac, C. Chappert, and B. Dieny, "A nonvolatile flip flop in magnetic fpga chip," in Proc. IEEE Int. Design Test Integr. Syst. Conf., Tunisia, 2006.
8. N. Sakimura, T. Sugibayashi, R. Nebashi, and N. Kasai, "Nonvolatile magnetic flip-flop for standby-power-free socs," in Proc. Custom Integr. Circuits Conf., 2008, pp. 355-358.
9. S. Matsunaga, J. Hayakawa, S. Ikeda, K. Miura, H. Hasegawa, T. Endoh, H. Ohno, and T. Hanyu, "Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions," Appl. Phys. Exp., vol.1, 2008.
10. L. W. Nagel, Spice2: A Computer Program to Simulate Semiconductor Circuits Berkeley/Univ. CA/Electronics Res. Lab., ERL-M520, May 1975.
11. Bsim Home Page Univ. CA, Berkeley, [Online]. Available: http://www-device.eecs.berkeley.edu/bsim3/
12. S. Lee, S. Lee, H. Shin, and D. Kim, "Advanced hspice macromodel for magnetic tunnel junction," Jpn J. Appl. Phys., vol.44, pp. 2696-2700, 2005.
13. M. Madec, J. B. Kammerer, F. Pregaldiny, L. Hebrard, and C. Lalle- ment, "Compact modeling of magnetic tunnel junction," in Proc. Joint 6th Int. IEEE Northeast Workshop Circuits Syst. TAISA Conf., 2008.
14. W. Zhao, E. Belhaire, V. Javerliac, Q. Mistral, E. Nicolle, C. Chap- pert, and B. Dieny, "A macro model of spin transfer torque based magnetic tunnel junction device for hybrid magnetic-cmos design," in Proc. IEEE Int. Behavorial Modeling Simul. Conf., 2006.
15. V. Javerliac, "Magnetic tunnel junction compact device model for electrical simulations of spintronics components," in Proc. Magn. Magn. Mater. Conf., San Jose, Oct.-Nov. 30-33, 2005.
16. M. Julliere, "Tunneling between ferromagnetic films," Phys. Lett. A, vol.54, pp. 225-226, Sep. 8, 1975.
17. E. C. Stoner and E. P. Wolfarth, "A mechanism of magnetic hysteresis in heterogeneous alloys," Philosophical Trans. Royal Soc. London, vol.240, pp. 599-642, 1948.
18. L. Landau and E. Lifshitz, "Theory of the dispersion of magnetic permeability in ferromagnetic bodies," Physikalische Zeitschrift der Sow- jetunion, vol.8, pp. 153-169, 1935.
19. R. Stratton, "Volt-current characteristics for tunneling through insulating films," J. Phys. Chem. Sol., vol.23, pp. 1177-1190, Sep. 1962.
20. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, "Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junction," Phys. l Rev. Lett., vol.74, pp. 3273-3276, Apr. 1995.
21. J. P. Nozieres, B. Dieny, O. Redon, I. Prejbeanu, and R. Sousa, "FrencHmémoire Magnétique à Consommation Réduite," Patent C150-B-20488, 2003.
22. A. Fert, V. Cros, J.-M. George, J. Grollier, H. Jaffres, A. Hamzic, A. Vaures, and H. Le Gall, "Magnetization reversal by injection and transfer of spin: Experiments and theory," J. Mag. Magn. Mater., vol.272, pp. 1706-1711, 2004.