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Volumn 43, Issue 6, 2007, Pages 2355-2357

Magnetic content addressable memory

Author keywords

Associative memories; Magnetic devices; Memory array; Tunneling

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRODES; MAGNETIC FIELD EFFECTS; MOSFET DEVICES; TUNNEL JUNCTIONS;

EID: 34249004525     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2007.893305     Document Type: Article
Times cited : (14)

References (5)
  • 1
    • 0035307445 scopus 로고    scopus 로고
    • A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques
    • Apr
    • S. C. Liu, F. A. Wu, and J. B. Kuo, "A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques," IEEE J. Solid-State Circuits, vol. 36, no. 4, pp. 712-716, Apr. 2001.
    • (2001) IEEE J. Solid-State Circuits , vol.36 , Issue.4 , pp. 712-716
    • Liu, S.C.1    Wu, F.A.2    Kuo, J.B.3
  • 2
    • 0034260706 scopus 로고    scopus 로고
    • Spintronics: A new paradigm for electronics for the new millennium
    • Sep
    • S. A. Wolf and D. Treger, "Spintronics: A new paradigm for electronics for the new millennium," IEEE Trans. Magn., vol. 36, no. 5, pt. 1, pp. 2748-2751, Sep. 2000.
    • (2000) IEEE Trans. Magn , vol.36 , Issue.5 PART. 1 , pp. 2748-2751
    • Wolf, S.A.1    Treger, D.2
  • 3
    • 20844455024 scopus 로고    scopus 로고
    • Magnetoresistive random access memory using magnetic tunnel junctions
    • May
    • S. Tehrani, "Magnetoresistive random access memory using magnetic tunnel junctions," Proc. IEEE, vol. 91, no. 5, pp. 703-714, May 2003.
    • (2003) Proc. IEEE , vol.91 , Issue.5 , pp. 703-714
    • Tehrani, S.1
  • 4
    • 33746900455 scopus 로고    scopus 로고
    • MgO-based tunnel junction material for high-speed toggle magnetic random access memory
    • Aug
    • W. D. Renu, "MgO-based tunnel junction material for high-speed toggle magnetic random access memory," IEEE Trans. Magn., vol. 42, no. 8, pp. 1935-1939, Aug. 2006.
    • (2006) IEEE Trans. Magn , vol.42 , Issue.8 , pp. 1935-1939
    • Renu, W.D.1
  • 5
    • 0037662581 scopus 로고    scopus 로고
    • Online, Available
    • LLG Micromagnetics Simulator [Online]. Available: http://llgmicro. home.mindspring.com/Homelntro.htm
    • LLG Micromagnetics Simulator


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.