Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Han, T ^a   Meng, F Y ^b   Zhang, S ^a   Cheng, X M ^a   Oh, J I ^a,c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c BOSTON COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATION METHODS; CO-DOPED; DOPING ELEMENTS; DOPING LEVELS; EXPERIMENTAL METHODS; FIRST-PRINCIPLES CALCULATION; WIDELY TUNABLE; WURTZITES; ZNO;

CALCULATIONS; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TAPES; ZINC OXIDE; ZINC SULFIDE;

ELECTRONIC PROPERTIES;

EID: 80053537431     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3627233     Document Type: Article

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