A study of electrical uniformity for monolithic polycrystalline silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 71, Issue 3, 2002, Pages 407-412

  Yang, Hong ^a   Wang, He ^a   Chen, Guangde ^a   Yu, Huacong ^b   Xi, Jianping ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Electric uniformity; Polycrystalline silicon; Solar cell

Indexed keywords

CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); PASSIVATION; POLYSILICON; SILICON NITRIDE;

DISLOCATION DENSITIES; ELECTRIC UNIFORMITY;

SILICON SOLAR CELLS;

EID: 0037082895     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00131-3     Document Type: Article

References (8)

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4. Response to phosphorus gettering of different regions of cast multicrystalline silicon ingots
5. Limitations of gettering to multicrystalline silicon
6. x optical thin film
7. Overview on SiN surface passivation of crystalline silicon solar cells
8. Understanding carrier trapping in multicrystalline silicon