Effects of Mg content and B doping on structural, electrical and optical properties of Zn1-xMgxO thin films prepared by MOCVD

Journal of Crystal Growth

Volumn 312, Issue 12-13, 2010, Pages 1929-1934

  Li, C ^a   Meng, F Y ^a   Zhang, S ^a   Wang, J Q ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

A1. Properties; A3. MOCVD; A3. Thin film; B1. Zn1 xMg xO:B; B1. Zn1 xMgxO

Indexed keywords

A3.THIN FILM; ABSORPTION EDGES; B-DOPING; BAND GAP ENERGY; BLUE SHIFT; ELECTRICAL AND OPTICAL PROPERTIES; GRAIN SIZE; HEXAGONAL WURTZITE; HIGH TRANSMITTANCE; INTERPLANAR DISTANCE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MG CONTENT; MOCVD; OPTICAL MEASUREMENT; POTENTIAL APPLICATIONS; PREFERENTIAL GROWTH; THIN FILM SOLAR CELLS; UV DETECTOR; UV REGION; VISIBLE REGION; WINDOW LAYER; ZNO STRUCTURES;

ABSORPTION; DEPOSITION; ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL DATA PROCESSING; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; SOLAR ENERGY; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC; ZINC OXIDE; ZINC SULFIDE;

FILM PREPARATION;

EID: 77955228766     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.03.018     Document Type: Article

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