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Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

Acceptor-related low-energy photoluminescence from boron-doped Si nanocrystals

(5) Sugimoto, Hiroshi a Fujii, Minoru a Fukuda, Masatoshi a Imakita, Kenji a Hayashi, Shinji a

a KOBE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR STATE; ACID SOLUTIONS; B ATOMS; BORON-DOPED; ETCHING RATE; ETCHING TIME; HF SOLUTIONS; LOW ENERGIES; SI NANOCRYSTAL;

BORON; ETCHING; HYDROFLUORIC ACID; NANOCRYSTALS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

SILICON;

EID: 80053531030 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3642952 Document Type: Article

Times cited : (24)

References (35)

1
- 0000946710
- edited by D. J. Lockwood (Academic, New York), Vol
- L. Brus, Semiconductor and Semimetals, edited by, D. J. Lockwood, (Academic, New York, 1998), Vol. 49, p. 303.
- (1998) Semiconductor and Semimetals , vol.49 , pp. 303
- Brus, L.¹

2
- 0033726229
- 10.1016/S0167-5729(99)00012-6
- O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000). 10.1016/S0167-5729(99)00012-6
- (2000) Surf. Sci. Rep. , vol.38 , pp. 1
- Bisi, O.¹ Ossicini, S.² Pavesi, L.³

3
- 45749086529
- 10.1021/nn700319z
- F. Erogbogbo, K. Yong, I. Roy, G. Xu, P. Prasad, and M. Swihart, ACS Nano 2, 873 (2008). 10.1021/nn700319z
- (2008) ACS Nano , vol.2 , pp. 873
- Erogbogbo, F.¹ Yong, K.² Roy, I.³ Xu, G.⁴ Prasad, P.⁵ Swihart, M.⁶

4
- 63049094179
- 10.1038/nmat2398
- J. Park, L. Gu, G. von Maltzahn, E. Ruoslahti, S. Bhatia, and M. Sailor, Nature Mater. 8, 331 (2009). 10.1038/nmat2398
- (2009) Nature Mater. , vol.8 , pp. 331
- Park, J.¹ Gu, L.² Von Maltzahn, G.³ Ruoslahti, E.⁴ Bhatia, S.⁵ Sailor, M.⁶

5
- 0033243388
- 10.1002/(SICI)1521-3951(199910)215:2<>1.0.CO;2-Q
- D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Status Solidi B 215, 871 (1999). 10.1002/(SICI)1521-3951(199910)215:2<>1.0.CO;2-Q
- (1999) Phys. Status Solidi B , vol.215 , pp. 871
- Kovalev, D.¹ Heckler, H.² Polisski, G.³ Koch, F.⁴

6
- 0034670732
- 10.1103/PhysRevB.62.16820
- S. Takeoka, M. Fujii, and S. Hayashi, Phys. Rev. B 62, 016820 (2000). 10.1103/PhysRevB.62.16820
- (2000) Phys. Rev. B , vol.62 , pp. 016820
- Takeoka, S.¹ Fujii, M.² Hayashi, S.³

7
- 4243209194
- 10.1103/PhysRevB.48.11024
- C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 48, 011024 (1993). 10.1103/PhysRevB.48.11024
- (1993) Phys. Rev. B , vol.48 , pp. 011024
- Delerue, C.¹ Allan, G.² Lannoo, M.³

8
- 80051909049
- 10.1155/2008/279502
- V. A. Belyakov, V. A. Burdov, R. Lockwood, and A. Meldrum, Adv. Opt. Technol. 2008, 279502 (2008). 10.1155/2008/279502
- (2008) Adv. Opt. Technol. , vol.2008 , pp. 279502
- Belyakov, V.A.¹ Burdov, V.A.² Lockwood, R.³ Meldrum, A.⁴

9
- 0034670807
- 10.1103/PhysRevB.62.15942
- G. Ledoux, O. Guillois, D. Porterat, C. Reynaud, F. Huisken, B. Kohn, and V. Paillard, Phys. Rev. B 62, 015942 (2000). 10.1103/PhysRevB.62.15942
- (2000) Phys. Rev. B , vol.62 , pp. 015942
- Ledoux, G.¹ Guillois, O.² Porterat, D.³ Reynaud, C.⁴ Huisken, F.⁵ Kohn, B.⁶ Paillard, V.⁷

10
- 0008813837
- 10.1103/PhysRevLett.82.197
- M. Wolkin, J. Jorne, P. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197 (1999). 10.1103/PhysRevLett.82.197
- (1999) Phys. Rev. Lett. , vol.82 , pp. 197
- Wolkin, M.¹ Jorne, J.² Fauchet, P.³ Allan, G.⁴ Delerue, C.⁵

11
- 28344449717
- 10.1063/1.2119424
- S. Ossicini, E. Degoli, F. Iori, E. Luppi, R. Magri, G. Cantele, F. Trani, and D. Ninno, Appl. Phys. Lett. 87, 173120 (2005). 10.1063/1.2119424
- (2005) Appl. Phys. Lett. , vol.87 , pp. 173120
- Ossicini, S.¹ Degoli, E.² Iori, F.³ Luppi, E.⁴ Magri, R.⁵ Cantele, G.⁶ Trani, F.⁷ Ninno, D.⁸

12
- 34547564818
- 10.1103/PhysRevB.76.085302
- F. Iori, E. Degoli, R. Magri, I. Marri, G. Cantele, D. Ninno, F. Trani, O. Pulci, and S. Ossicini, Phys. Rev. B 76, 085302 (2007). 10.1103/PhysRevB.76. 085302
- (2007) Phys. Rev. B , vol.76 , pp. 085302
- Iori, F.¹ Degoli, E.² Magri, R.³ Marri, I.⁴ Cantele, G.⁵ Ninno, D.⁶ Trani, F.⁷ Pulci, O.⁸ Ossicini, S.⁹

13
- 34347390654
- 10.1103/PhysRevB.75.235304
- Q. Xu, J. Luo, S. Li, J. Xia, J. Li, and S. Wei, Phys. Rev. B 75, 235304 (2007). 10.1103/PhysRevB.75.235304
- (2007) Phys. Rev. B , vol.75 , pp. 235304
- Xu, Q.¹ Luo, J.² Li, S.³ Xia, J.⁴ Li, J.⁵ Wei, S.⁶

14
- 62549086118
- 10.1063/1.3081629
- E. de Oliveira, E. Albuquerque, J. de Sousa, and G. Farias, Appl. Phys. Lett. 94, 103114 (2009). 10.1063/1.3081629
- (2009) Appl. Phys. Lett. , vol.94 , pp. 103114
- De Oliveira, E.¹ Albuquerque, E.² De Sousa, J.³ Farias, G.⁴

15
- 78751650874
- 10.1021/jp1102934
- X. Chen, X. Pi, and D. Yang, J. Phys. Chem. C 115, 661 (2011). 10.1021/jp1102934
- (2011) J. Phys. Chem. C , vol.115 , pp. 661
- Chen, X.¹ Pi, X.² Yang, D.³

16
- 70449094760
- 10.1016/j.ssc.2009.09.033
- J. Eom, T. Chan, and J. Chelikowsky, Solid State Commun. 150, 130 (2010). 10.1016/j.ssc.2009.09.033
- (2010) Solid State Commun. , vol.150 , pp. 130
- Eom, J.¹ Chan, T.² Chelikowsky, J.³

17
- 33744821385
- 10.1103/PhysRevLett.96.226802
- G. Dalpian and J. Chelikowsky, Phys. Rev. Lett. 96, 226802 (2006). 10.1103/PhysRevLett.96.226802
- (2006) Phys. Rev. Lett. , vol.96 , pp. 226802
- Dalpian, G.¹ Chelikowsky, J.²

18
- 0001563522
- 10.1063/1.367976
- M. Fujii, S. Hayashi, and K. Yamamoto, J. Appl. Phys. 83, 7953 (1998). 10.1063/1.367976
- (1998) J. Appl. Phys. , vol.83 , pp. 7953
- Fujii, M.¹ Hayashi, S.² Yamamoto, K.³

19
- 0032620994
- 10.1063/1.124313
- M. Fujii, A. Mimura, S. Hayashi, and K. Yamamoto, Appl. Phys. Lett. 75, 184 (1999). 10.1063/1.124313
- (1999) Appl. Phys. Lett. , vol.75 , pp. 184
- Fujii, M.¹ Mimura, A.² Hayashi, S.³ Yamamoto, K.⁴

20
- 41349111879
- 10.1063/1.2897291
- X. Pi, R. Gresback, R. Liptak, S. Campbell, and U. Kortshagen, Appl. Phys. Lett. 92, 123102 (2008). 10.1063/1.2897291
- (2008) Appl. Phys. Lett. , vol.92 , pp. 123102
- Pi, X.¹ Gresback, R.² Liptak, R.³ Campbell, S.⁴ Kortshagen, U.⁵

21
- 4444372839
- 10.1103/PhysRevLett.89.206805
- M. Fujii, A. Mimura, S. Hayashi, Y. Yamamoto, and K. Murakami, Phys. Rev. Lett. 89, 206805 (2002). 10.1103/PhysRevLett.89.206805
- (2002) Phys. Rev. Lett. , vol.89 , pp. 206805
- Fujii, M.¹ Mimura, A.² Hayashi, S.³ Yamamoto, Y.⁴ Murakami, K.⁵

22
- 72849123428
- 10.1103/PhysRevB.80.165326
- A. Stegner, R. Pereira, R. Lechner, K. Klein, H. Wiggers, M. Stutzmann, and M. Brandt, Phys. Rev. B 80, 165326 (2009). 10.1103/PhysRevB.80.165326
- (2009) Phys. Rev. B , vol.80 , pp. 165326
- Stegner, A.¹ Pereira, R.² Lechner, R.³ Klein, K.⁴ Wiggers, H.⁵ Stutzmann, M.⁶ Brandt, M.⁷

23
- 51849130350
- 10.1063/1.2973399
- R. Lechner, A. Stegner, R. Pereira, R. Dietmueller, M. Brandt, A. Ebbers, M. Trocha, H. Wiggers, and M. Stutzmann, J. Appl. Phys. 104, 053701 (2008). 10.1063/1.2973399
- (2008) J. Appl. Phys. , vol.104 , pp. 053701
- Lechner, R.¹ Stegner, A.² Pereira, R.³ Dietmueller, R.⁴ Brandt, M.⁵ Ebbers, A.⁶ Trocha, M.⁷ Wiggers, H.⁸ Stutzmann, M.⁹

24
- 0030270437
- 10.1016/0038-1098(96)00408-5
- Y. Kanzawa, M. Fujii, S. Hayashi, and K. Yamamoto, Solid State Commun. 100, 227 (1996). 10.1016/0038-1098(96)00408-5
- (1996) Solid State Commun. , vol.100 , pp. 227
- Kanzawa, Y.¹ Fujii, M.² Hayashi, S.³ Yamamoto, K.⁴

25
- 65449181982
- 10.1063/1.3120768
- K. Sato, N. Fukata, and K. Hirakuri, Appl. Phys. Lett. 94, 161902 (2009). 10.1063/1.3120768
- (2009) Appl. Phys. Lett. , vol.94 , pp. 161902
- Sato, K.¹ Fukata, N.² Hirakuri, K.³

26
- 4043123781
- 10.1103/PhysRevLett.75.2228
- C. Delerue, M. Lannoo, G. Allan, E. Martin, I. Mihalcescu, J. Vial, R. Romestain, F. Muller, and A. Bsiesy, Phys. Rev. Lett. 75, 2228 (1995). 10.1103/PhysRevLett.75.2228
- (1995) Phys. Rev. Lett. , vol.75 , pp. 2228
- Delerue, C.¹ Lannoo, M.² Allan, G.³ Martin, E.⁴ Mihalcescu, I.⁵ Vial, J.⁶ Romestain, R.⁷ Muller, F.⁸ Bsiesy, A.⁹

27
- 4444311564
- 10.1063/1.1779955
- M. Fujii, Y. Yamaguchi, Y. Takase, K. Ninomiya, and S. Hayashi, Appl. Phys. Lett. 85, 1158 (2004). 10.1063/1.1779955
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1158
- Fujii, M.¹ Yamaguchi, Y.² Takase, Y.³ Ninomiya, K.⁴ Hayashi, S.⁵

28
- 0043178973
- 10.1149/1.2407805
- A. Tenney, J. Electrochem. Soc. 118, 1658 (1971). 10.1149/1.2407805
- (1971) J. Electrochem. Soc. , vol.118 , pp. 1658
- Tenney, A.¹

29
- 27844497660
- 10.1063/1.2135214
- M. Fujii, Y. Yamaguchi, Y. Takase, K. Ninomiya, and S. Hayashi, Appl. Phys. Lett. 87, 211919 (2005). 10.1063/1.2135214
- (2005) Appl. Phys. Lett. , vol.87 , pp. 211919
- Fujii, M.¹ Yamaguchi, Y.² Takase, Y.³ Ninomiya, K.⁴ Hayashi, S.⁵

30
- 84951883636
- 10.1021/ja00031a072
- J. Lauerhaas, G. Credo, J. Heinrich, and M. Sailor, J. Am. Chem. Soc. 114, 1911 (1992). 10.1021/ja00031a072
- (1992) J. Am. Chem. Soc. , vol.114 , pp. 1911
- Lauerhaas, J.¹ Credo, G.² Heinrich, J.³ Sailor, M.⁴

31
- 0029345177
- 10.1007/BF01538209
- C. Choy and K. Cheah, Appl. Phys. A 61, 45 (1995). 10.1007/BF01538209
- (1995) Appl. Phys. A , vol.61 , pp. 45
- Choy, C.¹ Cheah, K.²

32
- 0029220575
- 10.1016/0040-6090(94)05626-O
- C. Delerue, M. Lannoo, G. Allan, and E. Martin, Thin Solid Films 255, 27 (1995). 10.1016/0040-6090(94)05626-O
- (1995) Thin Solid Films , vol.255 , pp. 27
- Delerue, C.¹ Lannoo, M.² Allan, G.³ Martin, E.⁴

33
- 0033074945
- 10.1016/S0038-1098(98)00632-2
- A. Mimura, M. Fujii, S. Hayashi, and K. Yamamoto, Solid State Commun. 109, 561 (1999). 10.1016/S0038-1098(98)00632-2
- (1999) Solid State Commun. , vol.109 , pp. 561
- Mimura, A.¹ Fujii, M.² Hayashi, S.³ Yamamoto, K.⁴

34
- 0004005306
- 2nd ed. (Wiley, New York)
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

35
- 0001157128
- 10.1063/1.122099
- G. Polisski, H. Heckler, D. Kovalev, M. Schwartzkopff, and F. Koch, Appl. Phys. Lett. 73, 1107 (1998). 10.1063/1.122099
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1107
- Polisski, G.¹ Heckler, H.² Kovalev, D.³ Schwartzkopff, M.⁴ Koch, F.⁵

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