Doping of B atoms into Si nanocrystals prepared by RF cosputtering

Solid State Communications

Volumn 100, Issue 4, 1996, Pages 227-230

  Kanzawa, Y ^a   Fujii, M ^a   Hayashi, S ^a   Yamamoto, K ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

A. nanostructures; B. impurities in semiconductors; D. Fano interference; E. Raman scattering

Indexed keywords

ANNEALING; BORON; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; ELECTRON MICROSCOPY; LIGHT INTERFERENCE; NANOSTRUCTURED MATERIALS; PHONONS; RAMAN SCATTERING; SEMICONDUCTOR DOPING; SILICA; SPUTTERING;

ELECTRONIC EXCITATIONS; EXCITATION WAVELENGTH; FANO INTERFERENCE;

SEMICONDUCTING SILICON;

EID: 0030270437     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00408-5     Document Type: Article

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