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Applied Physics Letters

Volumn 99, Issue 13, 2011, Pages

Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructure

(5) Yoshida, Shunji a Yokogawa, Toshiya a Imai, Yasuhiko b Kimura, Shigeru b Sakata, Osami b

a PANASONIC CORPORATION (Japan)

b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; GAN SUBSTRATE; HETEROEPITAXIAL; HIGH RESOLUTION; IN-PLANE ANISOTROPY; IN-PLANE STRUCTURES; INGAN/GAN; LATTICE TILTS; M-PLANE; MICROBEAM X-RAY DIFFRACTION; PEIERLS-NABARRO MODEL; PRISM PLANES; SLIP DIRECTION; SLIP PLANE; SLIP SYSTEM;

EPITAXIAL GROWTH; GALLIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 80053525054 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3644978 Document Type: Article

Times cited : (49)

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