Yield shear stress dependence on nanoindentation strain rate in bulk GaN crystal

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 429-431

  Fujikane, Masaki ^a   Yokogawa, Toshiya ^a   Nagao, Shijo ^b,c   Nowak, Roman ^b  

^a PANASONIC CORPORATION   (Japan)

^b AALTO UNIVERSITY   (Finland)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

GaN; Nanoindentation; Nanoscale deformation; Strain rate

Indexed keywords

DISLOCATION NUCLEATION; DISPLACEMENT BURST; GAN; GAN CRYSTALS; M-PLANE; MAXIMUM SHEAR STRESS; NANOSCALE DEFORMATION; PEIERLS POTENTIAL; PLASTIC DEFORMATION MECHANISMS; SLIP SYSTEM; STRESS DEPENDENCE;

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GALLIUM ALLOYS; GALLIUM NITRIDE; NANOINDENTATION; NANOSTRUCTURED MATERIALS; PLASTIC DEFORMATION; SHEAR STRESS; STRENGTH OF MATERIALS; YIELD STRESS;

STRAIN RATE;

EID: 79951710169     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000604     Document Type: Article

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