Measurement of strain distribution in InGaAsP selective-area growth layers using a micro-area X-ray diffraction method with sub-μm spatial resolution

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 9 A/B, 2002, Pages

  Kimura, Shigeru ^a   Kagoshima, Yasushi ^b   Kobayashi, Kenji ^a   Izumi, Koichi ^a,b   Sakata, Yasutaka ^a   Sudo, Sinya ^a   Yokoyama, Yoshiyuki ^a   Niimi, Toshihiro ^a   Tsusaka, Yoshiyuki ^b   Matsui, Junji ^a  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

InGaAsP; Metalorganic vapor phase epitaxy; Microbeam; Selective area growth; Strain; X ray diffraction; Zone plate

Indexed keywords

CRYSTAL LATTICES; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; X RAY DIFFRACTION ANALYSIS; X RAY OPTICS;

SPATIAL RESOLUTIONS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037107063     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1013     Document Type: Article

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