Characterization and control of crystal nucleation in amorphous electron beam evaporated silicon for thin film solar cells

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Sontheimer, Tobias ^a   Scherf, Simone ^a   Klimm, Carola ^a   Becker, Christiane ^a   Rech, Bernd ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY E; AMORPHOUS SI; COATED GLASS SUBSTRATES; CRYSTAL NUCLEATION; DEPOSITION TEMPERATURES; DESIGN RULES; EVAPORATED SILICON; HIGH RATE; NUCLEATION LAYERS; NUCLEATION RATE; POLYCRYSTALLINE THIN FILM; PROCESSING TIME; STEADY-STATE NUCLEATION RATE; STEADY-STATE REGIME; STRUCTURAL DISORDERS; SUBSTRATE ROUGHNESS; SUBSTRATE TOPOGRAPHY; SUBSTRATE TYPES; THIN FILM SOLAR CELLS; TIME LAG; TRANSIENT REGIME; ZNO;

ACTIVATION ENERGY; AMORPHOUS FILMS; AMORPHOUS MATERIALS; DEPOSITION; ELECTRON BEAMS; NUCLEATION; OPTICAL MICROSCOPY; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; ZINC OXIDE;

AMORPHOUS SILICON;

EID: 80053525043     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3627373     Document Type: Article

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