Comparative study of solid-phase crystallization of amorphous silicon deposited by hotwire CVD, plasma-enhanced CVD, and electron-beam evaporation

Materials Research Society Symposium Proceedings

Volumn 989, Issue , 2007, Pages 391-396

  Stradins, Paul ^a   Kunz, Oliver ^b   Young, David L ^a   Yan, Fa ^a   Jones, Kim M ^a   Xu, Yueqin ^a   Reedy, Robert C ^a   Branz, Howard M ^a   Aberle, Armin G ^b   Wang, Qi ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DOPING (ADDITIVES); NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS;

CRYSTALLINE GROWTH; ELECTRON-BEAM EVAPORATION; HOT-WIRE CHEMICAL VAPOR DEPOSITION; SOLID-PHASE CRYSTALLIZATION;

AMORPHOUS SILICON;

EID: 41549104287     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0989-a16-04     Document Type: Conference Paper

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