Nanowire based heterostructures: Fundamental properties and applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8106, Issue , 2011, Pages

  Heiss, Martin ^a   Colombo, Carlo ^a   Morral, Anna Fontcuberta I ^a  

^a EPFL   (Switzerland)

Author keywords

Nanoepitaxy; Semiconductor nanowires; Solar energy conversion

Indexed keywords

FUNDAMENTAL LIMITS; FUNDAMENTAL PROPERTIES; GAAS; NANOEPITAXY; OPTICAL DEVICE PERFORMANCE; P-I-N JUNCTIONS; SEMICONDUCTOR NANOWIRE; SINGLE NANOWIRES; SURFACE PASSIVATION;

CHARACTERIZATION; CRYSTALS; ENERGY CONVERSION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NANOWIRES; PASSIVATION; SEMICONDUCTOR DEVICES; SOLAR ENERGY;

HETEROJUNCTIONS;

EID: 80053491472     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.896471     Document Type: Conference Paper

References (44)

1. Tsakalakos, L., "Nanostructures for photovoltaics," Materials Science and Engineering: R: Reports 62(6), 175-189 (2008).
2. Tian, B., Kempa, T. J., and Lieber, C. M., "Single nanowire photovoltaics," Chemical Society Reviews 38(1), 16-24 (2009).
3. Kayes, B. M., Atwater, H. A., and Lewis, N. S., "Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells," Journal of Applied Physics 97(11), 114302 (2005).
4. Hu, L. and Chen, G., "Analysis of Optical Absorption in Silicon Nanowire Arrays for Photovoltaic Applications," Nano Letters 7(11), 3249-3252 (2007).
5. Glas, F., "Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires," Phys. Rev. B 74, 121302 (Sep 2006).
6. Kandala, A., Betti, T., and i Morral, A. F., "General theoretical considerations on nanowire solar cell designs," physica status solidi (a) 206(1), 173-178 (2009).
7. Uccelli, E., Arbiol, J., Magen, C., Krogstrup, P., Russo-Averchi, E., Heiss, M., Mugny, G., Morier-Genoud, F., Nygard, J., Morante, J. R., and Fontcuberta i Morral, A., "Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates," Nano Letters (2011).
8. Fontcuberta i Morral, A., Spirkoska, D., Arbiol, J., Heigoldt, M., Morante, J. R., and Abstreiter, G., "Prismatic Quantum Heterostructures Synthesized on Molecular-Beam Epitaxy GaAs Nanowires," Small 4(7), 899-903 (2008).
9. Fontcuberta i Morral, A., Colombo, C., Abstreiter, G., Arbiol, J., and Morante, J. R., "Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires," Appl. Phys. Lett. 92(6), 063112 (2008).
10. Fontcuberta i Morral, A., "Gold-Free GaAs Nanowire Synthesis and Optical Properties," Selected Topics in Quantum Electronics, IEEE Journal of 17, 819-828 (july-aug. 2011).
11. Henry, C. H., "Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells," Journal of Applied Physics 51(8), 4494-4500 (1980). (Pubitemid 11441336)
12. Colombo, C., Spirkoska, D., Frimmer, M., Abstreiter, G., and Fontcuberta i Morral, A., "Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy," Phys. Rev. B 77(15), 155326 (2008).
13. Heigoldt, M., Arbiol, J., Spirkoska, D., Rebled, J. M., Conesa-Boj, S., Abstreiter, G., Peiro, F., Morante, J. R., and i Morral, A. F., "Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires," Journal of Materials Chemistry 19(7), 840-848 (2009).
14. Uccelli, E., Arbiol, J., Morante, J. R., and Fontcuberta i Morral, A., "InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires," ACS Nano 4(10), 5985-5993 (2010).
15. Demichel, O., Heiss, M., Bleuse, J., Mariette, H., and i Morral, A. F., "Impact of surfaces on the optical properties of GaAs nanowires," Appl. Phys. Lett. 97(20), 201907 (2010).
16. Sze, S. M., [Semiconductor Devices: Physics and Technology], John Wiley & Sons, 2nd edition ed. (2001).
17. Suzuki, T. and Ogawa, M., "Degradation of photoluminescence intensity caused by excitation-enhanced oxidation of GaAs surfaces," Appl. Phys. Lett. 31(7), 473-475 (1977).
18. Guidotti, D., Hasan, E., Hovel, H., and Albert, M., "Model for degradation of band gap photo-luminescence in GaAs," Il Nuovo Cimento D 11, 583-613 (Apr. 1989).
19. Wittry, D. B. and Kyser, D. F., "Measurement of Diffusion Lengths in Direct-Gap Semiconductors by Electron-Beam Excitation," Journal of Applied Physics 38(1), 375-382 (1967).
20. Sturge, M. D., "Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV," Phys. Rev. 127, 768-773 (Aug 1962).
21. Williams, E.W. and Chapman, R. A., "Temperature Dependence of Photoluminescence in Cadmium-Doped Epitaxial GaAs," Journal of Applied Physics 38(6), 2547-2552 (1967).
22. Rosenwaks, Y., Shapira, Y., and Huppert, D., "Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP," Phys. Rev. B 45, 9108-9119 (Apr 1992).
23. Ando, K., Yamamoto, A., and Yamaguchi, M., "Surface Band Bending Effects on Photoluminescence Intensity in n-InP Schottky and MIS Diodes," Japanese Journal of Applied Physics 20(6), 1107-1112 (1981). (Pubitemid 12504051)
24. Stroscio, J. A., Feenstra, R. M., and Fein, A. P., "Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface," Phys. Rev. Lett. 58, 1668-1671 (Apr 1987).
25. Ishikawa, Y., Tsurumi, N., Fukui, T., and Hasegawa, H., "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy," Papers from the 25th annual conference on the physics and chemistry of semiconductor interfaces 16(4), 2387-2394, AVS (1998). (Pubitemid 128575373)
26. Bartels, F., Surkamp, L., Clemens, H. J., and M?onch, W., "Oxygen and hydrogen adsorption on GaAs(110)," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 1(3), 756-762 (1983).
27. Su, C. Y., Lindau, I., Chye, P. W., Skeath, P. R., and Spicer, W. E., "Photoemission studies of the interaction of oxygen with GaAs(110)," Phys. Rev. B 25, 4045-4068 (Mar 1982).
28. Landgren, G., Ludeke, R., Jugnet, Y., Morar, J. F., and Himpsel, F. J., "The oxidation of GaAs(110): A reevaluation," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2(3), 351-358 (1984).
29. Fukasawa, R., Wakaki, M., Ohta, K., and Okumura, H., "Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy," Japanese Journal of Applied Physics 25(Part 1, No. 4), 652-653 (1986). (Pubitemid 16585623)
30. Sakamoto, N., Hirakawa, K., and Ikoma, T., "Conduction-type conversion in Si-doped (311)A GaAs grown by molecular beam epitaxy," Appl. Phys. Lett. 67(10), 1444-1446 (1995).
31. Gardner, N. R., Woods, N. J., Domnguez, P. S., Tok, E. S., Norman, C. E., and Harris, J. J., "Electrical properties of lateral p - n junctions formed on patterned (110) GaAs substrates," Semiconductor Science and Technology 12(6), 737 (1997).
32. Dufouleur, J., Colombo, C., Garma, T., Ketterer, B., Uccelli, E., Nicotra, M., and Fontcuberta i Morral, A., "P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires," Nano Letters 10(5), 1734-1740 (2010).
33. Colombo, C., Heiß, M., Gratzel, M., and Fontcuberta i Morral, A., "Gallium arsenide p-i-n radial structures for photovoltaic applications," Appl. Phys. Lett. 94(17), 173108 (2009).
34. Tian, B., Zheng, X., Kempa, T. J., Fang, Y., Yu, N., Yu, G., Huang, J., and Lieber, C. M., "Coaxial silicon nanowires as solar cells and nanoelectronic power sources," Nature 449, 885-889 (Oct. 2007). (Pubitemid 47598610)
35. Kelzenberg, M. D., Turner-Evans, D. B., Kayes, B. M., Filler, M. A., Putnam, M. C., Lewis, N. S., and Atwater, H. A., "Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells," Nano Letters 8(2), 710-714 (2008). PMID: 18269257. (Pubitemid 351346044)
36. Kempa, T. J., Tian, B., Kim, D. R., Hu, J., Zheng, X., and Lieber, C. M., "Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices," Nano Letters 8(10), 3456-3460 (2008). PMID: 18763836.
37. Czaban, J. A., Thompson, D. A., and LaPierre, R. R., "GaAs Core-Shell Nanowires for Photovoltaic Applications," Nano Letters 9(1), 148-154 (2009).
38. Aspnes, D. E. and Studna, A. A., "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0," Phys. Rev. B 27, 985 (Jan 1983).
39. Fan, Z., Ruebusch, D., Rathore, A., Kapadia, R., Ergen, O., Leu, P., and Javey, A., "Challenges and prospects of nanopillar-based solar cells," Nano Research 2, 829-843 (2009).
40. Maiolo, J., Kayes, B., Filler, M., Putnam, M., Kelzenberg, M., Atwater, H., and Lewis, N., "High Aspect Ratio Silicon Wire Array Photoelectrochemical Cells," J. Am. Chem. Soc. 129(41), 12346-12347 (2007). (Pubitemid 47598206)
41. Garnett, E. and Yang, P., "Light Trapping in Silicon Nanowire Solar Cells," Nano Letters 10(3), 1082-1087 (2010).
42. Ruda, H. E. and Shik, A., "Polarization-sensitive optical phenomena in thick semiconducting nanowires," Journal of Applied Physics 100(2), 024314 (2006).
43. Cao, L., White, J. S., Park, J.-S., Schuller, J. A., Clemens, B. M., and Brongersma, M. L., "Engineering light absorption in semiconductor nanowire devices," Nat Mater 8, 643-647 (Aug. 2009).
44. Goto, H., Nosaki, K., Tomioka, K., Hara, S., Hiruma, K., Motohisa, J., and Fukui, T., "Growth of Core- Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy," Applied Physics Express 2(3), 035004 (2009).