SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 13, 2011, Pages

Surface passivation of p-type Ge substrate with high-quality GeN x layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

(5) Fukuda, Yukio a Okamoto, Hiroshi b Iwasaki, Takuro b Otani, Yohei a Ono, Toshiro b

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b HIROSAKI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND EDGE; CRITICAL PARAMETER; FORMATION TEMPERATURE; GE SUBSTRATES; GE SURFACES; HIGH QUALITY; INTERFACE PROPERTY; INTERFACE TRAP DENSITY; LOW TEMPERATURES; NITRIDATION TEMPERATURE; P-TYPE; PLASMA NITRIDATION; POST-METALLIZATION ANNEALING; ROOM TEMPERATURE; SURFACE PASSIVATION; VALENCE BAND EDGES;

CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; GERMANIUM; NITRIDATION; PASSIVATION; SUBSTRATES;

INTERFACES (MATERIALS);

EID: 80053486655 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3647621 Document Type: Article

Times cited : (14)

References (13)

1
- 73349121950
- 10.1109/TED.2009.2035030
- Y. Fukuda, Y. Yazaki, Y. Otani, T. Sato, H. Toyota, and T. Ono, IEEE Trans. Electron Devices 57, 282 (2010). 10.1109/TED.2009.2035030
- (2010) IEEE Trans. Electron Devices , vol.57 , pp. 282
- Fukuda, Y.¹ Yazaki, Y.² Otani, Y.³ Sato, T.⁴ Toyota, H.⁵ Ono, T.⁶

2
- 48249136210
- 10.1063/1.2959731
- H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, Appl. Phys. Lett. 93, 032104 (2008). 10.1063/1.2959731
- (2008) Appl. Phys. Lett. , vol.93 , pp. 032104
- Matsubara, H.¹ Sasada, T.² Takenaka, M.³ Takagi, S.⁴

3
- 68249110411
- 10.1143/APEX.2.071404
- C. H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, Appl. Phys. Express 2, 071404 (2009). 10.1143/APEX.2.071404
- (2009) Appl. Phys. Express , vol.2 , pp. 071404
- Lee, C.H.¹ Tabata, T.² Nishimura, T.³ Nagashio, K.⁴ Kita, K.⁵ Toriumi, A.⁶

4
- 33746191673
- Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures
- DOI 10.1063/1.2206395
- T. Maeda, T. Yasuda, M. Nishizawa, N. Miyata, Y. Morita, and S. Takagi, J. Appl. Phys. 100, 014101 (2006). 10.1063/1.2206395 (Pubitemid 44090869)
- (2006) Journal of Applied Physics , vol.100 , Issue.1 , pp. 014101
- Maeda, T.¹ Yasuda, T.² Nishizawa, M.³ Miyata, N.⁴ Morita, Y.⁵ Takagi, S.⁶

5
- 33746036473
- 4 dielectrics on Ge
- DOI 10.1063/1.2220531
- S. J. Wang, J. W. Chai, J. S. Pan, and A. C. H. Huan, Appl. Phys. Lett. 89, 022105 (2006). 10.1063/1.2220531 (Pubitemid 44079063)
- (2006) Applied Physics Letters , vol.89 , Issue.2 , pp. 022105
- Wang, S.J.¹ Chai, J.W.² Pan, J.S.³ Huan, A.C.H.⁴

6
- 33847119423
- Role of germanium nitride interfacial layers in Hf O2 /germanium nitride/germanium metal-insulator-semiconductor structures
- DOI 10.1063/1.2679941
- T. Maeda, M. Nishizawa, Y. Morita, and S. Takagi, Appl. Phys. Lett. 90, 072911 (2007). 10.1063/1.2679941 (Pubitemid 46280715)
- (2007) Applied Physics Letters , vol.90 , Issue.7 , pp. 072911
- Maeda, T.¹ Nishizawa, M.² Morita, Y.³ Takagi, S.⁴

7
- 33845962528
- Fermi-level pinning and charge neutrality level in germanium
- DOI 10.1063/1.2410241
- A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006). 10.1063/1.2410241 (Pubitemid 46035146)
- (2006) Applied Physics Letters , vol.89 , Issue.25 , pp. 252110
- Dimoulas, A.¹ Tsipas, P.² Sotiropoulos, A.³ Evangelou, E.K.⁴

8
- 79960548134
- 10.1063/1.3611581
- Y. Fukuda, Y. Otani, H. Toyota, and T. Ono, Appl. Phys. Lett. 99, 022902 (2011). 10.1063/1.3611581
- (2011) Appl. Phys. Lett. , vol.99 , pp. 022902
- Fukuda, Y.¹ Otani, Y.² Toyota, H.³ Ono, T.⁴

9
- 0021479595
- 10.1143/JJAP.23.L534
- T. Ono, C. Takahashi, and S. Matsuo, Jpn. J. Appl. Phys. 28, L534 (1984). 10.1143/JJAP.23.L534
- (1984) Jpn. J. Appl. Phys. , vol.28 , pp. 534
- Ono, T.¹ Takahashi, C.² Matsuo, S.³

10
- 55149084173
- 10.1143/JJAP.47.7553
- Y. Otani, Y. Fukuda, T. Sato, K. Nakagawa, H. Toyota, and T. Ono, Jpn. J. Appl. Phys. 47, 7553 (2008). 10.1143/JJAP.47.7553
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 7553
- Otani, Y.¹ Fukuda, Y.² Sato, T.³ Nakagawa, K.⁴ Toyota, H.⁵ Ono, T.⁶

11
- 36248937753
- Electrical analyses of Germanium MIS structure and spectroscopic measurement of the interface trap density in an insulator/Germanium interface at room temperature
- DOI 10.1109/TED.2007.907111
- Y. Fukuda, Y. Otani, Y. Itayama, and T. Ono, IEEE Trans. Electron Devices 54, 2878 (2007). 10.1109/TED.2007.907111 (Pubitemid 350123872)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.11 , pp. 2878-2883
- Fukuda, Y.¹ Otani, Y.² Itayama, Y.³ Ono, T.⁴

12
- 84896741951
- 10.1109/T-ED.1966.15827
- C. N. Berglund, IEEE Trans. Electron Devices 13, 701 (1966). 10.1109/T-ED.1966.15827
- (1966) IEEE Trans. Electron Devices , vol.13 , pp. 701
- Berglund, C.N.¹

13
- 39749167824
- On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
- DOI 10.1109/TED.2007.912365
- K. Marten, C. O. Chui, G. Brammertz, B. D. Jaeger, J. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, and G. Groeseneken, IEEE Trans. Electron Devices 55, 547 (2008). 10.1109/TED.2007.912365 (Pubitemid 351297540)
- (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.2 , pp. 547-556
- Martens, K.¹ Chui, C.O.² Brammertz, G.³ De Jaeger, B.⁴ Kuzum, D.⁵ Meuris, M.⁶ Heyns, M.M.⁷ Krishnamohan, T.⁸ Saraswat, K.⁹ Maes, H.E.¹⁰ Groeseneken, G.¹¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.