Large enhancement of the effective lifetime of n-type multicrystalline silicon by two step spin-on phosphorus diffusion and SiO2 passivation

Applied Physics Letters

Volumn 99, Issue 12, 2011, Pages

  Ben Jaballah, A ^a   Moumni, B ^a   Dhamrin, M ^b   Saitoh, T ^b   Kamisako, K ^b   Bessais, B ^a  

^a RESEARCH AND TECHNOLOGY CENTER OF ENERGY   (Tunisia)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE LIFETIME; EFFECTIVE LIFETIME; ELECTRICAL ACTIVITIES; EXTERNAL SURFACES; GETTERING EFFECT; LIGHT-INDUCED DEGRADATION; LOW QUALITIES; MULTI-CRYSTALLINE SILICON; PHOSPHORUS DIFFUSION; PHOSPHORUS-DOPED; SPIN-ON; SURFACE OXIDATIONS; TUNNELING OXIDES;

GRAIN BOUNDARIES; IMPURITIES; PHOSPHORUS; POLYSILICON; REMOVAL; SILICON COMPOUNDS; SILICON OXIDES;

PASSIVATION;

EID: 80053387573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3641882     Document Type: Article

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