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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 759-762

Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing

(7) Hofstetter, Jasmin a Lelièvre, Jean François b Fenning, David P c Bertoni, Mariana I c Buonassisi, Tonio c Luque, Antonio a del Cañizo, Carlos a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b Centro de Tecnología del Silicio Solar (Spain)

c MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Defect engineering; P gettering; Silicon solar cells; Simulation

Indexed keywords

ANNEALING TEMPERATURES; DEFECT ENGINEERING; ELECTRON LIFETIME; EMITTER DIFFUSION; GETTERING; GETTERING TREATMENTS; INDUSTRIAL FABRICATION; IRON GETTERING; LOW TEMPERATURE ANNEALING; LOW TEMPERATURES; P-DIFFUSION; PROCESSING TIME; SI WAFER; SIMULATION; SOLAR CELL EFFICIENCIES; SOLAR CELL PERFORMANCE; SOLAR CELL PROCESSING;

ANNEALING; DIFFUSION; PHOSPHORUS; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79952683053 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201000334 Document Type: Article

Times cited : (10)

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