A new self-boosting phenomenon by soure/drain depletion cut-off in NAND flash memory

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Volumn , Issue , 2007, Pages 39-41

  Oh, Dongyean ^a   Lee, Changsub ^a   Lee, Seungchul ^a   Kim, Tae Kyung ^a   Song, Jaihyuk ^a   Choi, Jeonghyuk ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Multi level cell (MLC); NAND flash device; Self boosting; Source drain depletion

Indexed keywords

ARSENIC COMPOUNDS; CELLS; ELECTRIC CONDUCTIVITY; MOSFET DEVICES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE;

BOOSTING EFFICIENCY; CELL DESIGN; CUT-OFF; DOPANT LEVELS; FULLY DEPLETED; JUNCTION DEPTHS; MULTI LEVEL (ML); N TYPE DOPANTS; NAND FLASH; NAND FLASH MEMORIES; NON-VOLATILE; PROGRAMMING VOLTAGE; SEMICONDUCTOR MEMORIES; SHORT-CHANNEL EFFECT (SCE); SIMULATION RESULTS;

FLASH MEMORY;

EID: 48649096339     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2007.4290572     Document Type: Conference Paper

References (2)

1. K.D.Suh et al., IEEE J. Solid-State Circuits, Vol. 31, no. 11, pp1149-1156, 1995
2. Y.Matsunaga et al., US Patent no. 6859394 B2, 2005