Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs

Current Applied Physics

Volumn 10, Issue 4, 2010, Pages 1096-1102

  Cho, Seongjae ^a   Choi, Jung Dal ^b   Park, Byung Gook ^a   Cho, Il Hwan ^c  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Myong Ji University   (South Korea)

Author keywords

3 D device simulation; FinFET; NAND flash memory; Program inhibition; Self boosting

Indexed keywords

3D DEVICE SIMULATION; BIT LINES; BOOSTING EFFECTS; CAPACITANCE MODEL; CHANNEL DOPINGS; CHANNEL LENGTH; CHANNEL POTENTIAL; FIN DIMENSIONS; FIN WIDTHS; FINFETS; LOCAL MAXIMUM; NAND FLASH MEMORY; NAND-TYPE FLASH MEMORY; NONVOLATILE FLASH MEMORIES; OPTIMUM CONDITIONS; PROCESS PARAMETERS; PROCESS VARIABLES; PROGRAM DISTURBANCE; PROGRAM OPERATION; PROGRAM VOLTAGE; SILICON CHANNEL; SONOS FLASH MEMORY;

BORON; BORON COMPOUNDS; FINS (HEAT EXCHANGE); NAND CIRCUITS; PROGRAM INTERPRETERS; THREE DIMENSIONAL;

FLASH MEMORY;

EID: 77951253129     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.01.004     Document Type: Article

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