Direct field effect of neighboring cell transistor on cell-to-cell interference of nand flash cell arrays

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 174-177

  Park, Mincheol ^a   Kim, Keosoo ^a   Park, Jong Ho ^a   Choi, Jeong Hyuck ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Cell to cell interference; Direct field effect; NAND Flash memory

Indexed keywords

BORON; BORON COMPOUNDS; CAPACITANCE; CYTOLOGY; DATA STORAGE EQUIPMENT; ELECTRIC FIELDS; FLASH MEMORY; MICROPROCESSOR CHIPS; NAND CIRCUITS; TRANSISTORS;

BORON SEGREGATIONS; CELL SIZES; CELL TRANSISTORS; CELL-TO-CELL INTERFERENCE; CHANNEL EDGES; COUPLING EFFECTS; DIRECT FIELD EFFECT; FLASH CELLS; FLOATING-GATE VOLTAGES; NAND FLASH MEMORY; PARASITIC CAPACITANCES; SHALLOW-TRENCH ISOLATIONS;

CELLS;

EID: 59649113060     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2009555     Document Type: Article

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