Minimum supply voltage and yield estimation for large SRAMs under parametric variations

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 19, Issue 11, 2011, Pages 2120-2125

  Wang, Jiajing ^a   Calhoun, Benton H ^b  

^a INTEL CORPORATION   (United States)

^b University of Virginia   (United States)

Author keywords

Minimum operation voltage (Vmin); Monte Carlo (MC); SRAM; static noise margin (SNM); variation; yield

Indexed keywords

MONTE CARLO; OPERATION VOLTAGE; STATIC NOISE MARGIN; VARIATION; YIELD;

ESTIMATION; PARAMETRIC DEVICES; STATIC RANDOM ACCESS STORAGE;

MONTE CARLO METHODS;

EID: 80052870149     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2010.2071890     Document Type: Article

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