Atomically flattening technology at 850°C for Si(100) surface

ECS Transactions

Volumn 28, Issue 1, 2010, Pages 299-309

  Li, X ^a   Suwa, T ^a   Teramoto, A ^a   Kuroda, R ^a   Sugawa, S ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; ATOMS; FLOW OF GASES; TEMPERATURE;

ANNEALING TEMPERATURES; ARGON AMBIENT; ATOMIC TERRACES; ATOMICALLY FLAT SURFACE; FLATTENING TECHNOLOGY; LOW TEMPERATURES; SI(100) SURFACE; VERTICAL FURNACES;

SILICON WAFERS;

EID: 78650570762     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3375615     Document Type: Conference Paper

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