Dual graphene films growth process based on plasma-assisted chemical vapor deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7761, Issue , 2010, Pages

  Lee, Chang Seok ^a   Baraton, Laurent ^a   He, Zhanbing ^a   Maurice, Jean Luc ^a   Chaigneau, Marc ^a   Pribat, Didier ^a,b   Cojocaru, Costel Sorin ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b Sungkyunkwan University   (South Korea)

Author keywords

Graphene synthesis; High resolution transmission electron microscopy; Low temperature; PECVD; Raman spectroscopy

Indexed keywords

ANNEALING PROCESS; CARBON PRECURSORS; CRYSTALLIZATION PROCESS; DC PLASMA; ELECTRONIC DEVICE; EXPOSURE-TIME; GRAPHENE GROWTH; GRAPHENE LAYERS; GROWTH PROCESS; HIGH RESOLUTION; LOW TEMPERATURES; MANUFACTURING IS; MATERIAL QUALITY; NICKEL SURFACES; NICKEL THIN FILM; PECVD; PHYSICAL LIMITS; PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; SYNTHESIS ROUTE;

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; DC POWER TRANSMISSION; DISSOLUTION; GRAPHENE; METHANE; NICKEL; OXIDE FILMS; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77957849644     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.861866     Document Type: Conference Paper

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