VLSI functional analysis by dynamic emission microscopy

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1431-1435

  Perdu, Philippe ^a   Dibattista, Jérôme ^b   Dudit, Sylvain ^c   Nakamura, Tomonori ^d  

^a CNES   (France)

^b Thales ISS   (France)

^c STMICROELECTRONICS   (France)

^d CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE UNDER TEST; EMISSION MICROSCOPY; LONG DURATION; LOW POWER SUPPLY VOLTAGE; NEAR INFRARED; TIME RESOLVED IMAGING;

FUNCTIONAL ANALYSIS; MULTIPHOTON PROCESSES; SIGNAL PROCESSING; SIGNAL TO NOISE RATIO;

DYNAMIC ANALYSIS;

EID: 80052626042     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.077     Document Type: Conference Paper

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