Hot-carrier photoemission in scaled CMOS technologies: A challenge for emission based testing and diagnostics

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 595-601

  Tosi, Alberto ^a   Stellari, Franco ^b   Pigozzi, Andrea ^a   Marchesi, Giulio ^a   Zappa, Franco ^a  

^a POLITECNICO DI MILANO   (Italy)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

CMOS; Emission; Emission microscopy (EMMI); Hot carrier; MOSFET; Optical testing; Photoemission; Picosecond Imaging for Circuit Analysis (PICA); Testing; Time Resolved Emission (TRE)

Indexed keywords

EMISSION MICROSCOPY (EMMI); OPTICAL CIRCUIT DIAGNOSTICS; PICOSECOND IMAGING FOR CIRCUIT ANALYSIS (PICA); SHORT CHANNEL EFFECTS (SCE); TIME RESOLVED EMISSION (TRE);

HOT CARRIERS; INFRARED RADIATION; LUMINESCENCE; MOSFET DEVICES; OPTICAL TESTING; PHOTOEMISSION; VOLTAGE CONTROL;

CMOS INTEGRATED CIRCUITS;

EID: 34250709556     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251284     Document Type: Conference Paper

References (24)

1. T.H. Ng et al., "An Integrated (Automated) Photon Emission Microscopy and MOSFET Characterization System for Combined Microscopic and Macroscopic Device Analysis", Proc. of International Physical and Failure Analysis of Integrated Circuits Conference, 1999, pp. 113-118.
2. J.A. Kash and J.C. Tsang, "Dynamic Internal Testing of CMOS Circuits Using Hot Luminescence", IEEE Electron Dev. Let., vol. 18, no. 7, 1997, pp. 330-332.
3. P. Song, et al., "An Advanced Optical Diagnostic Technique for IBM Microprocessor", Proc. of Int. Test Conf, 2005, pp. 48.1-48.9
4. E. Menzel and E. Kubalek, "Fundamental of Electron Beam Testing of integrated circuits", The Scanning Electron Microscope, vol. 5, 1983, pp. 103-122.
5. T.M. Eiles, D.L. Woods, V. R. Rao "Optical Probing of Flip-Chip-Packaged Microprocessors", Proc. of International Solid-State Circuits Conference, 2000, pp. 220-221.
6. E.I. Cole Jr., P. Tangyunyong, D.L. Barton "Backside Localization of Open and Shorted IC Interconnections", Proc. of International Reliability Physics Symposium, 1998, pp. 129-136.
7. A. Firiti, D. Lewis, F. Beaudoin, P. Perdu, G. Haller, Y. Danto, "Implementing Thermal Laser and Photoelectric Laser Stimulation in a failure analysis laboratory", Proc. of IPFA, 2003, 7-11 July 2003, pp. 210-212.
8. K.R. Wilsher and W.K. Lo, "Practical Optical Waveform Probing of Flip-Chip CMOS Devices", Proc. of International Testing Conference, 1999, pp. 932-939.
9. A. Tosi, M. Remmach, R. Desplats, F. Zappa, P. Perdu, "Implementation of TRE systems into Emission Microscopes", Microelectronics Reliability, vol. 44, issue 9-11, September-November 2004, pp. 1529-1534.
10. F. Stellari, P. Song, J.C. Tsang, M.K McManus, and M.B. Ketchen, "Optical diagnosis of excess IDDQ in low power CMOS circuits", Proc. of European Symp. Reliab. of Electron Devices, Failure Physics and Analysis (ESREF), 2002, pp. 1689-1694
11. F. Stellari, P. Song, J.C. Tsang, M.K. McManus, and M.B. Ketchen, "Testing and Diagnostics of CMOS Circuits Using Light Emission from Off-State Leakage Current", IEEE Trans. on Electron Dev., vol. 51, no. 9, 2004, pp. 1455-1462.
12. J.D. Bude, N. Sano and A. Yoshii, "Hot-carrier luminescence in silicon", Phys. Rev. B, vol 45, no. 11, 1992, pp. 5848-5956.
13. M.V. Fischetti, S.E. Laux and E. Crabbe, "Understanding hot-electron transport in silicon devices: Is there a shortcut?", J. Appl. Phys., vol. 78, 1995, pp. 1058-1087.
14. "C4880-21 user manual", Hamamatsu Photonics K.K., Japan.
15. http://sales.hamamatsu.com/assets/pdf/hpspdr/e_phemos.pdf
16. F. Stellari, A. Tosi, F. Zappa, S. Cova, "CMOS Circuit Testing via Time-Resolved Luminescence Measurements and Simulations", Instrumentation and Measurement, IEEE Transactions on, Volume 53, Issue 1, Feb. 2004, pp. 163-169.
17. "Photon Counting Detector Module, PDM Series", datasheet, Micro Photon Devices, Bolzano, Italy. Available at http://www.micro-photon- devices.com
18. www.credence.com
19. Gol'tsman, et al., "Fabrication and properties of an ultrafast NbN hot-electron single-photon detector", IEEE Trans. on Applied Superconductivity, 11, pp. 574-577, 2001.
20. A. Tosi, F. Stellari, F. Zappa, and S. Cova, "Hot-carrier luminescence: comparison of different CMOS technologies", European Solid-State Device Research Conference (ESSDERC), 2003, pp. 351-354.
21. J. A. Rowlette, E. B. Varner, S. Seidel, M. Bailon, "Hot carrier emission from 50 nm n and p channel MODFET devices", Lasers and Electro-Optics Society, 2003, LEOS 2003, The 16th Annual Meeting of the IEEE, Volume 2, 27-28 Oct. 2003, pp. 740-741.
22. W. Maes, K. De Meyer, and R. Van Overstraeten, Solid State Electron. 33, 6 (1990) 705-718.
23. W. N. Grant, Solid State Electron. 16, 10 (1973) 1189-1203.
24. J.C. Tsang and M.V. Fischetti, "Why hot carrier emission probes such as PICA will work for 50 nm, 1V CMOS technologies," Reliability of electron devices, failure physics and analysis, pp. 1465-70 (2001).