Soft Defect Localization (SDL) on ICs

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2002, Pages 21-27

  Bruce, Michael R ^a   Bruce, Victoria J ^a   Eppes, David H ^a   Wilcox, Jacob ^a   Cole Jr , Edward I ^b   Tangyunyong, Paiboon ^b   Hawkins, Charles F ^c  

^a ADVANCED MICRO DEVICES   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RESISTIVE INTERCONNECT LOCALIZATION (RIL); SOFT DEFECT LOCALIZATION (SDL);

CAPACITORS; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTROMIGRATION; FAILURE ANALYSIS; LASER BEAM EFFECTS; OPTICAL INTERCONNECTS; PROBABILITY; PROBLEM SOLVING; THERMAL EFFECTS; VECTORS;

INTEGRATED CIRCUIT TESTING;

EID: 1542300653     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

1. T.W. Joseph and B. Bossman, "Infrared laser microscopy of structures on heavily doped silicon," International Symposium for Testing & Failure Analysis (ISTFA), pp. 1-7, Nov. 1992.
2. D.L. Barton, P. Tangyunyong, J.M. Soden, A.Y. Liang, F.J. Low, A.N. Zaplatin, K. Shivanandan, and G. Donohoe, "Infrared Light Emission From Semiconductor Devices," International Symposium for Testing & Failure Analysis (ISTFA), pp. 9-17, Nov. 1996.
3. M. Paniccia, T. Eiles, V.R.M. Rao, and W.M. Yee, "Novel Optical Probing Technique for Flip Chip Packaged Microprocessors," International Test Conference (ITC), pp. 740-747, Oct. 1998.
4. J.A. Kash, J.C. Tsang, D.R. Knebel, and D.P. Vallet, "Non-Invasive Backside Failure Analysis of ICs by Time-Dependent Light Emission: PICA," International Symposium for Testing & Failure Analysis (ISTFA), pp. 482-488, Nov. 1998.
5. E.I. Cole Jr., J.M. Soden, J.L. Rife, D.L. Barton, and C.L. Henderson, "Novel Failure Analysis Techniques Using Photon Probing in a Scanning Optical Microscope," International Reliability Physics Symposium (IRPS), pp. 388-398, April 1994.
6. K. Nikawa and S. Inoue, "New Capabilities of OBIRCH Method for Fault Localization and Defect Detection," Proc. of Sixth Asian Test Symposium, pp. 219-219, July 1997.
7. E.I. Cole Jr., P. Tangyunyong, D.A. Benson, and D.L. Barton, "TIVA and SEI Developments for Enhanced Front and Backside Interconnection Failure Analysis," European Symp. On Reliability of Electron Devices (ESREF), pp. 991-996, Oct. 1999.
8. E.I. Cole Jr., P. Tangyunyong, C.F. Hawkins, M.R. Bruce, V.J. Bruce, R.M. Ring, and W.L. Chong, "Resistive Interconnection Localization," International Symposium for Testing & Failure Analysis (ISTFA), pp. 43-50, Nov. 2001.
9. J. Segura and C. Hawkins, CMOS Electronics: How it works, How it Fails, to be published 2003.
10. R. Degraeve, B. Kaczer, A. De Keersgieter, and Gl. Groeseneken, "Relation between breakdown mode and breakdown location in short channel NMOSFETs," International Reliability Physics Symposium (IRPS), pp. 360-366, 2001.
11. B.E. Weir, P.J. Silverman, D. Monroe, K.S. Krisch, M.A. Alam, G.B. Alers, T.W. Sorsch, G.L. Timp, F. Baumann, C.T. Liu, Y. Ma, D. Hwang, "Ultra-thin Gate Dielectrics: They Break Down, But Do They Fail?," International Electron Device Mtg. (IEDM), pp. 73-76, 1997.
12. B. Kaczer, R. Degraeve, M. Rasras, K. Van de Mieroop, P.J. Roussel, and G. Groeseneken, "Impact of MOSFET Gate Oxide Breakdown on Digital Operation and Reliability," IEEE Trans. on Electron Devices, Vol. 49, pp. 500-506, Mar. 2002.
13. S. Kolachina, B. Taylor, K.S. Wills, "Application of TIVA in Design Debug," International Symposium for Testing & Failure Analysis (ISTFA), pp. 497-501, Nov. 2000.
14. B. Davis and W. Chi, "Antireflection Coatings for Semiconductor Failure Analysis," International Symposium for Testing & Failure Analysis (ISTFA), pp. 155-160, Nov. 2000.