Improved interfacial state density in Al2 O3/GaAs interfaces using metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

  Cheng, Cheng Wei ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; CVD PROCESS; DEPOSITED FILMS; DEPTH PROFILE; FREQUENCY DISPERSION; GAAS; IN-SITU; IN-SITU DEPOSITION; INTERFACIAL STATE DENSITY; ISO-PROPANOLS; METALORGANIC CHEMICAL VAPOR DEPOSITION; TRIMETHYALUMINUM;

GALLIUM ALLOYS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 77953003173     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428790     Document Type: Article

References (18)

1. M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, and J. R. Kwo, IEEE Trans. Electron Devices IETDAI 0018-9383 44, 214 (1997). 10.1109/16.557709
2. F. Ren, J. M. Kuo, M. Hong, W. S. Hobson, J. R. Lothian, J. Lin, H. S. Tasi, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Lett. EDLEDZ 0741-3106 19, 309 (1998). 10.1109/55.704409
3. M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. APPLAB 0003-6951 87, 252104 (2005). 10.1063/1.2146060 (Pubitemid 41816133)
4. C. W. Cheng and E. A. Fitzgerald, Appl. Phys. Lett. APPLAB 0003-6951 93, 031902 (2008). 10.1063/1.2960574
5. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. APPLAB 0003-6951 83, 180 (2003). 10.1063/1.1590743
6. M. Xu, Y. Q. Wu, O. Koybasi, T. Shen, and P. D. Ye, Appl. Phys. Lett. APPLAB 0003-6951 94, 212104 (2009). 10.1063/1.3147218
7. C. W. Cheng, J. Hennessy, D. Antoniadis, and E. A. Fitzgerald, Appl. Phys. Lett. APPLAB 0003-6951 95, 082106 (2009). 10.1063/1.3213545
8. C. W. Magee and R. E. Honig, Surf. Interface Anal. SIANDQ 0142-2421 4, 35 (1982). 10.1002/sia.740040202
9. M. P. Singh and S. A. Shivashankar, Surf. Coat. Technol. SCTEEJ 0257-8972 161, 135 (2002). 10.1016/S0257-8972(02)00470-X (Pubitemid 35225092)
10. J. S. Kim, H. A. Marzouk, P. J. Reucroft, J. D. Robertson, and C. E. Harmin, Jr., Appl. Phys. Lett. APPLAB 0003-6951 62, 681 (1993). 10.1063/1.108838
11. C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, Appl. Phys. Lett. APPLAB 0003-6951 94, 162101 (2009). 10.1063/1.3120546
12. C.-H. Chang, Y.-K. Chiou, Y.-C. Chang, K.-Y. Lee, T.-D. Lin, T.-B. Wu, M. Hong, and J. Kwo, Appl. Phys. Lett. APPLAB 0003-6951 89, 242911 (2006). 10.1063/1.2405387 (Pubitemid 46016063)
13. Comprehensive Organometallic Chemistry, edited by, G. Wilkinson, (Pergamon, Oxford, 1982), p. 462.
14. L. Hiltunen H. Kattelus, M. Leskelä, M. Mäkelä, L. Niinistö, E. Nykänen, P. Soininen, and M. Tiitta, Mater. Chem. Phys. MCHPDR 0254-0584 28, 379 (1991). 10.1016/0254-0584(91)90073-4 (Pubitemid 21735029)
15. D. K. Srivastava, L. K. Krannich, and C. L. Watkins, Inorg. Chem. INOCAJ 0020-1669 29, 3502 (1990). 10.1021/ic00343a043
16. G. Brammertz, H. C. Lin, K. Martens, D. Mercier, C. Merckling, J. Penaud, C. Adelmann, S. Sioncke, W. E. Wang, M. Caymax, M. Meuris, and M. Heyns, ECS Trans. ECSTF8 1938-5862 16, 507 (2008). 10.1149/1.2981632
17. K. Martens, C. O. Chui, G. Brammertz, B. De Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, and G. Groeseneken, IEEE Trans. Electron Devices IETDAI 0018-9383 55, 547 (2008). 10.1109/TED.2007.912365 (Pubitemid 351297540)
18. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 2003).