Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals

Applied Physics Letters

Volumn 99, Issue 9, 2011, Pages

  Wood, A W ^a   Weng, X ^b   Wang, Y Q ^c   Goldman, R S ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; FORMATION MECHANISM; INAS; INDIUM NITRIDE; LOW TEMPERATURES; N ION IMPLANTATION; THERMODYNAMIC MODEL; WURTZITES; ZINC-BLENDE;

INDIUM ARSENIDE; ION IMPLANTATION; MAXIMUM LIKELIHOOD; NANOCRYSTALS; NITRIDES; NUCLEATION; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM;

ZINC SULFIDE;

EID: 80052528424     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3617464     Document Type: Article

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