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Volumn 97, Issue 25, 2010, Pages

Tunneling characteristics of graphene

(8) Shin, Young Jun a Kalon, Gopinadhan a Son, Jaesung a Kwon, Jae Hyun a Niu, Jing a Bhatia, Charanjit S a Liang, Gengchiau a Yang, Hyunsoo a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BEFORE AND AFTER; E-FIELD; GRAPHENE DEVICES; MEMORY SWITCHING; NEGATIVE DIFFERENTIAL CONDUCTANCE; NONUNIFORM; ON/OFF RATIO; STRUCTURAL TRANSFORMATION; TUNNELING BARRIER; TUNNELING CHARACTERISTICS; TUNNELING REGIME;

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; RAMAN SPECTROSCOPY; SUPERCONDUCTING MATERIALS; TERMINALS (ELECTRIC);

GRAPHENE;

EID: 78650732087 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3527979 Document Type: Article

Times cited : (14)

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