Crystallographic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InP

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1418-1422

  Sun, Yasun T ^a   Anand, S ^a   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

A1. Doping; A3. Epitaxial lateral overgrowth; A3. Hydride vapour phase epitaxy; B2. Semiconducting indium phosphide

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALLOGRAPHY; DOPING (ADDITIVES); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

EPITAXIAL LATERAL OVERGROWTH (ELO); SCANNING CAPACITANCE MICROSCOPY;

EPITAXIAL GROWTH;

EID: 0036531173     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02230-8     Document Type: Article

References (8)