Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Mei, J ^a   Ponce, F A ^a   Fareed, R S Qhalid ^b   Yang, J W ^b   Khan, M Asif ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DISLOCATION DENSITY; PRECOALESCENCE; PULSED LATERAL EPITAXY;

COALESCENCE; COMPRESSIVE STRESS; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; EPITAXIAL GROWTH; SAPPHIRE;

ALUMINUM COMPOUNDS;

EID: 34249867130     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2745207     Document Type: Article

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