Sulfur-doped indium phosphide on silicon substrate brown by ELOG

Electrochemical and Solid-State Letters

Volumn 7, Issue 11, 2004, Pages

  Sun, Y T ^a   Lourdudoss, S ^a   Avella, M ^b   Jimenez J ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; MORPHOLOGY; PHOTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; SULFUR;

EPITAXIAL LATERAL OVERGROWTH (ELOG); HETEROEPITAXY; HIGH-ENERGY TRANSITIONS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 10044268511     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1804981     Document Type: Article

References (18)

1. S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, and H. Zabel, J. Appl. Phys., 68, R31 (1990).
2. S. Naritsuka, T. Nishinaga, M. Tachikawa, and H. Mori, Jpn, J. Appl. Phys., Part I, 34, L1432 (1995).
3. Y. T. Sun, J. Napierala, and S. Lourdudoss, in Proceedings of the 14th Indium Phosphide and Related Materials Conference, p. 339 (2002).
4. Y. T. Sun and S. Lourdudoss, Proc. SPIE, 4997, 221 (2003).
5. Y. T. Sun, K. Baskar, and S. Lourdudoss, J. Appl. Phys., 94, 2746 (2003).
6. K. H. Chang, R. Gibala, and D. J. Srolovitz, J. Appl. Phys., 67, 4093 (1990).
7. I. Yonenaga and K. Sumino, J. Appl. Phys., 74, 917 (1993).
8. Y. Seki, H. Watanabe, and J. Matsui, J. Appl. Phys., 49, 822 (1978).
9. A. Huber and N. T. Linh, J. Cryst. Growth, 29, 80 (1975).
10. W. K. Burton, N. Cabrera, and F. C. Frank, Philos. Trans. R. Soc. London, Ser. A, 243, 299 (1951).
11. B. G. Yacobi and D. B. Holt, J. Appl. Phys., 59, RI (1986).
12. D. Brasen and W. A. Bonner, Mater. Sci. Eng., 61, 167 (1983).
13. P. M. Raccah, H. Rahemi, J. Zehnder, F. z. Hawrylo, H. Kressel, and J. S. Helman, Appl. Phys. Lett., 39, 496 (1981).
14. E. W. Williams, W. Elder, M. G. Astles, M. Webb, J. B. Mullin, B. Straughan, and P. J. Tufton, J. Electrochem. Soc., 120, 1741 (1973).
15. A. Freundlich, A. Leycuras, J. C. Grenet, and C. Grattepain, Appl. Phys. Lett., 53, 2635 (1988).
16. A. Bartels, E. Peiner, R. Klockenbrink, and A. Schlachetzki, J. Appl. Phys., 78, 224 (1995).
17. F. H. Hawrylo, Appl. Phys. Lett., 37, 1038 (1980).
18. M. Kondo, C. Anayama, N. Okada, H. Sekiguchi, K. Domen, and T. Tanahashi, J. Appl. Phys., 76, 914 (1994).