A precise optical determination of nanoscale diameters of semiconductor nanowires

Nanotechnology

Volumn 22, Issue 38, 2011, Pages

  Bronstrup G ^a,b   Leiterer, C ^b   Jahr, N ^b   Gutsche, C ^c   Lysov, A ^c   Regolin, I ^c   Prost, W ^c   Tegude, F J ^c   Fritzsche, W ^b   Christiansen, S ^a,b  

^a MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DARK FIELD; DARK FIELD MICROSCOPY; DEVICE INTEGRATION; ELASTIC SCATTERING PROPERTIES; ELECTRICAL AND OPTICAL PROPERTIES; GAAS; GROWTH CONDITIONS; MIE CALCULATIONS; MIE RESONANCE; NANO SCALE; OPTICAL DETERMINATION; OPTICAL METHODS; OPTICAL SCATTERING; PHYSICAL PRINCIPLES; RELATIVE ERRORS; SEMICONDUCTING NANOWIRES; SEMICONDUCTOR NANOWIRE; STANDARD HARDWARE; VACUUM TECHNIQUES; VISIBLE COLOR CHANGES;

ELECTRIC PROPERTIES; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM ARSENIDE; NANOWIRES; OPTICAL DATA STORAGE; OPTICAL MICROSCOPY; SEMICONDUCTING GALLIUM;

OPTICAL PROPERTIES;

EID: 80052184986     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/38/385201     Document Type: Article

References (26)

1. Cao L, Fan P, Vasudev A P, White J S, Yu Z, Cai W, Schuller J A, Fan S and Brongersma M L 2010 Semiconductor nanowire optical antenna solar absorbers Nano Lett. 10 439-45
2. Cao L, Fan P, Barnard E S, Brown A M and Brongersma M L 2010 Tuning the color of silicon nanostructures Nano Lett. 10 2649-54
3. Cao L, White J S, Park J-S, Schuller J A, Clemens B M and Brongersma M L 2009 Engineering light absorption in semiconductor nanowire devices Nature Mater. 8 643-7
4. Muskens O L, Diedenhofen S L, Kaas B C, Algra R E, Bakkers E P A M, Gomez Rivas J and Lagendijk Ad 2009 Large photonic strength of highly tunable resonant nanowire materials Nano Lett. 9 930-4
5. Muskens O L, Gomez Rivas J, Algra R E, Bakkers E P A M and Lagendijk Ad 2008 Design of light scattering in nanowire materials for photovoltaic applications Nano Lett. 8 2638-42
6. Protasenko V, Bacinello D and Kuno M 2006 Experimental determination of the absorption cross-section and molar extinction coefficient of cdse and cdte nanowires J. Phys. Chem. B 110 25322-31 (Pubitemid 46196838)
7. Giblin J, Protasenko V and Kuno M 2009 Wavelength sensitivity of single nanowire excitation polarization anisotropies explained through a generalized treatment of their linear absorption ACS Nano 3 1979-87
8. Brönstrup G, Jahr N, Leiterer C, Cski A, Fritzsche W and Christiansen S 2010 Optical properties of individual silicon nanowires for photonic devices ACS Nano 4 7113-22
9. Xie P, Hu Y, Fang Y, Huang J and Lieber C M 2009 Diameter-dependent dopant location in silicon and germanium nanowires Proc. Natl Acad. Sci. 106 15254
10. Ford A C, Ho J C, Chueh Y L, Tseng Y C, Fan Z, Guo J, Bokor J and Javey A 2008 Diameter-dependent electron mobility of InAs nanowires Nano Lett. 9 360-5
11. Agarwal P, Vijayaraghavan M N, Neuilly F, Hijzen E and Hurkx G A M 2007 Breakdown enhancement in silicon nanowire pn junctions Nano Lett. 7 896-9 (Pubitemid 46717729)
12. Perea D E, Hemesath E R, Schwalbach E J, Lensch-Falk J L, Voorhees P W and Lauhon L J 2009 Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire Nature Nano 4 315-9
13. Wagner R S and Ellis W C 1964 Vapor-liquid-solid mechansim of single crystal growth Appl. Phys. Lett. 4 89-90
14. Kolasinski K W 2006 Catalytic growth of nanowires: vapor-liquid-solid, vapor-solid-solid, solution-liquid-solid and solid-liquid-solid growth Curr. Opin. Solid State Mater. Sci. 10 182-91 (Pubitemid 46880445)
15. Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M and Fontcuberta i Morral A 2010 P-doping mechanisms in catalyst-free gallium arsenide nanowires Nano Lett. 10 1734-40
16. Svensson C P T, Mrtensson T, Trägrdh J, Larsson C, Rask M, Hessman D, Samuelson L and Ohlsson J 2008 Monolithic GaAs/ingap nanowire light emitting diodes on silicon Nanotechnology 19 305201
17. Czaban J A, Thompson D A and LaPierre R R 2009 GaAs core-shell nanowires for photovoltaic applications Nano Lett. 9 148-54
18. Colombo C, Hei M, Grätzel M and Fontcuberta i Morral A 2009 Gallium arsenide p-i-n radial structures for photovoltaic applications Appl. Phys. Lett. 94 173108
19. Bohren C F and Huffman D R 1998 Absorption and Scattering of Light by Small Particles (Berlin: Wiley-VCH)
20. Aspnes D E and Studna A A 1983 Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV Phys. Rev. B 27 985
21. Gough B 2009 GNU Scientific Library Reference Manual 3rd edn (Godalming: Network Theory Ltd)
22. Paiano P, Prete P, Speiser E, Lovergine N, Richter W, Tapfer L and Mancini A M 2007 GaAs nanowires grown by Au-catalyst-assisted movpe using tertiarybutylarsine as group-V precursor ICMOVPE XIII: 13th Int. Conf. on Metal Organic Vapor Phase Epitaxy J. Cryst. Growth 298 620-4 (Pubitemid 46149740)
23. Borgström M, Deppert K, Samuelson L and Seifert W 2004 Size- and shape-controlled GaAs nano-whiskers grown by movpe: a growth study J. Cryst. Growth 260 18-22
24. Zhang G, Tateno K, Sanada H, Tawara T, Gotoh H and Nakano H 2009 Synthesis of GaAs nanowires with very small diameters and their optical properties with the radial quantum-confinement effect Appl. Phys. Lett. 95 123104
25. Phillips J C 1962 Band structure of silicon, germanium, and related semiconductors Phys. Rev. 125 1931-6
26. Tanner B K, Allwood D A and Mason N J 2001 Kinetics of native oxide film growth on epiready GaAs Mater. Sci. Eng. B 80 99-103 (Pubitemid 32331288)