Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications

Thin Solid Films

Volumn 519, Issue 22, 2011, Pages 7977-7981

  Feng, Li Wei ^a   Chang, Chun Yen ^a   Chang, Ting Chang ^b,c   Tu, Chun Hao ^a   Wang, Pai Syuan ^a   Lin, Chao Cheng ^d   Chen, Min Chen ^b   Huang, Hui Chun ^b   Gan, Der Shin ^b   Ho, New Jin ^b   Chen, Shih Ching ^b   Chen, Shih Cheng ^e  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Capacitance voltage; Nanocrystals; Nonvolatile memory; Titanium oxinitride; Transmission electron microscopy; X ray photoelectron microscopy

Indexed keywords

ANNEALING CONDITION; AS ANNEALING; CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE HYSTERESIS; CHEMICAL BONDINGS; COMPOSITION ANALYSIS; MEMORY WINDOW; NITROGEN AMBIENT; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; SEPARATION CHARACTERISTICS; THERMODYNAMICALLY STABLE; THRESHOLD VOLTAGE SHIFTS; TRANSMISSION ELECTRON; VOLTAGE RANGES; X RAY PHOTONS; X-RAY PHOTOELECTRON MICROSCOPY;

CAPACITANCE; CHEMICAL BONDS; EMISSION SPECTROSCOPY; MAGNETRONS; NANOCRYSTALS; PHASE SEPARATION; PHOTOELECTRON SPECTROSCOPY; PHOTONS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THRESHOLD VOLTAGE; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

TITANIUM OXIDES;

EID: 80052135660     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.05.042     Document Type: Article

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