Tungsten nanocrystal memory devices improved by supercritical fluid treatment

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Chen, C H ^a   Chang, T C ^b,c   Liao, I H ^d   Xi, P B ^b   Tsai, C T ^a   Yang, P Y ^e   Hsieh, Joe ^d   Chen, Jason ^d   Chen, U S ^a   Chen, J R ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d ProMOS Technologies Inc   (Taiwan)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; DATA STORAGE EQUIPMENT; LEAKAGE CURRENTS; OXIDATION; OXIDES; TUNGSTEN;

ELECTRICAL CHARACTERISTICS; NANOCRYSTAL MEMORY DEVICES; NONVOLATILE MEMORY DEVICES; TUNNEL OXIDES;

NANOCRYSTALS;

EID: 36849086838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2803937     Document Type: Article

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