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Volumn 519, Issue 22, 2011, Pages 7650-7658
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Multi-scale modelling of silicon nanocrystal synthesis by Low Pressure Chemical Vapor Deposition
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Author keywords
Chemical vapour deposition; Density Functional Theory; Modelling; Multi scale approach; Nanocrystals; Silicon
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Indexed keywords
AB INITIO MODELLING;
AB INITIO STUDY;
AREA DENSITY;
AUTOCATALYTIC;
CHEMICAL VAPOUR DEPOSITION;
DENSITY FUNCTIONALS;
DEPOSITION MECHANISM;
DESORPTION KINETICS;
EXPERIMENTAL DATA;
FLUENT CODE;
HYDROGEN DESORPTION;
INDUSTRIAL REACTORS;
KINETIC DATA;
LIMITING STEP;
MODELLING;
MULTI-SCALE APPROACHES;
MULTI-SCALE MODELLING;
MULTISCALE MODELS;
NUCLEATION AND GROWTH;
O-H BOND;
SILANOLS;
SILICON NANOCRYSTALS;
SILYLENES;
STICKING COEFFICIENTS;
SURFACE SITES;
THREE STAGES;
TRANSIENT CONDITIONS;
CALCULATIONS;
CHEMISORPTION;
COMPUTATIONAL FLUID DYNAMICS;
DENSITY FUNCTIONAL THEORY;
DESORPTION;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
NANOCRYSTALS;
NUCLEATION;
SILICON;
SILICON COMPOUNDS;
SYNTHESIS (CHEMICAL);
SILICON OXIDES;
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EID: 80052130565
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.05.016 Document Type: Article |
Times cited : (10)
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References (33)
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