Towards multiscale modeling of Si nanocrystals LPCVD deposition on SiO2: From ab initio calculations to reactor scale simulations

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 8854-8858

  Zahi, I ^d   Vergnes, H ^a   Caussat, B ^a   Esteve A ^b   Djafari Rouhani, M ^b   Mur, P ^c   Blaise, P ^c   Scheid, E ^b  

^a LABORATOIRE DE GÉNIE CHIMIQUE   (France)

^b LAAS CNRS   (France)

^c CEA LETI   (France)

^d NONE

Author keywords

CFD; DFT; LPCVD; Modelling; Nanodots; Silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DENSITY FUNCTIONAL THEORY; DEPOSITION RATES; NANOCRYSTALS; NUCLEATION; SEMICONDUCTING SILICON; SILICA;

DECOMPOSITION ACTIVATION BARRIER; NANODOTS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

COMPUTER SIMULATION; CRYSTAL GROWTH; DENSITY FUNCTIONAL THEORY; DEPOSITION RATES; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NANOCRYSTALS; NUCLEATION; SEMICONDUCTING SILICON; SILICA;

EID: 34547667453     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.127     Document Type: Article

References (17)

1. Tiwari S., Rana F., Chan K., Hanafi H., Chan W., and Bucanan D. Appl. Phys. Lett. 68 (1996) 1377
2. DeBlauwe J. IEEE Trans. Nanotechnol. 1 (2002) 72
3. Kleijn C.R. J. Electrochem. Soc. 138 7 (1991) 2190
4. Cordier C., Dehan E., Scheid E., and Duverneuil P. Mat. Sci. Eng. B, 37 (1996) 30
5. Jensen K.F., and Graves D.B. J. Electrochem. Soc. 130 (1983) 1950
6. Roenigk K.F., and Jensen K.F. J. Electrochem. Soc. 132 (1985) 448
7. Wilke T.E., Turner K.A., and Takoudis C.G. Chem. Eng. Sci. 41 4 (1986) 643
8. Cocheteau V., Caussat B., Mur P., Scheid E., Donnadieu P., and Billon T. Electrochem. Soc. Proc. 2005-09 (2005) 523
9. Vansant E.F., Van Der Voort P., and Vrancken K.C. Stud. Surf. Sci. Catal. 93 (1995)
10. Zahi I., Vergnes H., Caussat B., Esteve A., Djafari Rouhani M., Mur P., Blaise Ph., and Scheid E. Mater. Res. Soc. Symp. Proc. 959 (2007)
11. Baron T., Mazen F., Hartmann J.M., Mur P., Puglisi R.A., Lombardo S., Ammendola G., and Gerardi C. Solid-State Electron. 48 (2004) 1503
12. Becke A.D. J. Chem. Phys. 98 (1993) 5648
13. Lee C.T., Yang W.T., and Parr R.G. Phys. Rev., B 37 (1988) 785
14. Frisch M.J., Trucks G.W., Schlegel H.B., Scuseria G.E., Robb M.A., Cheeseman J.R., Montgomery Jr. J.A., Vreven T., Kudin K.N., Burant J.C., Millam J.M., Iyengar S.S., Tomasi J., Barone V., Mennucci B., Cossi M., Scalmani G., Rega N., Petersson G.A., Nakatsuji H., Hada M., Ehara M., Toyota K., Fukuda R., Hasegawa J., Ishida M., Nakajima T., Honda Y., Kitao O., Nakai H., Klene M., Li X., Knox J.E., Hratchian H.P., Cross J.B., Adamo C., Jaramillo J., Gomperts R., Stratmann R.E., Yazyev O., Austin A.J., Cammi R., Pomelli C., Ochterski J.W., Ayala P.Y., Morokuma K., Voth G.A., Salvador P., Dannenberg J.J., Zakrzewski V.G., Dapprich S., Daniels A.D., Strain M.C., Farkas O., Malick D.K., Rabuck A.D., Raghavachari K., Foresman J.B., Ortiz J.V., Cui Q., Baboul A.G., Clifford S., Cioslowski J., Stefanov B.B., Liu G., Liashenko A., Piskorz P., Komaromi I., Martin R.L., Fox D.J., Keith T., Al-Laham M.A., Peng C.Y., Nanayakkara A., Challacombe M., Gill P.M.W., Johnson B., Chen W., Wong M.W., Gonzalez C., and Pople J.A. Gaussian 03, Revision B.05 (2003), Gaussian, Inc., Pittsburgh PA
15. Greenlief C.M., and Armstrong M. J. Vac. Sci. Technol., B 13 (1995) 1810
16. Okada L.A., Wise M.L., and George S.M. Appl. Surf. Sci. 82/83 (1994) 410
17. Greenlief C.M., and Liehr M. Appl. Phys. Lett. 64 (1994) 601