A combined three-dimensional kinetic Monte Carlo and quantum chemistry study of the CVD of Si on Si(1 0 0) surfaces

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 371-380

  Cavallotti, Carlo ^a   Barbato, Alessandro ^a   Veneroni, Alessandro ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

A1. Chemical kinetics; A1. Density functional theory; A1. Monte Carlo method; A1. Morphology; A1. Multiscale model; B1. Si(1 0 0)

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DIFFUSION; FILM GROWTH; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY; SEMICONDUCTING SILICON;

DEPOSITION CHEMISTRY; GAS PHASE CHEMISTRY; MULTISCALE MODEL; SOLID FILMS;

REACTION KINETICS;

EID: 2342518240     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.068     Document Type: Conference Paper

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