Control of the nucleation density of Si quantum dots by remote hydrogen plasma treatment

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 75-78

  Makihara, K ^a   Deki, H ^b   Murakami, H ^a   Higashi, S ^a   Miyazaki, S ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b HIROSHIMA KOKUSAI GAKUIN UNIVERSITY   (Japan)

Author keywords

LPCVD; Plasma treatment; Si quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; HYDROGEN BONDS; MOSFET DEVICES; NUCLEATION; PLASMA APPLICATIONS; PRESSURE EFFECTS; REDUCTION; SILICON; SURFACE ROUGHNESS; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LPCVD; PLASMA TREATMENT; SI QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 15844426214     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.068     Document Type: Conference Paper

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