The effects of post-annealing on the performance of ZnO thin film transistors

Thin Solid Films

Volumn 519, Issue 22, 2011, Pages 8109-8113

  Bang, Seokhwan ^a   Lee, Seungjun ^a   Park, Joohyun ^a   Park, Soyeon ^a   Ko, Youngbin ^a   Choi, Changhwan ^a   Chang, Hojung ^b   Park, Hyungho ^c   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

^b Dankook University   (South Korea)

^c Yonsei University   (South Korea)

Author keywords

Annealing; Atomic layer deposition; Thin film transistor; Zinc oxide

Indexed keywords

AMBIENT AIR; ATOMIC LAYER; CONTACT RESISTIVITIES; DEVICE PERFORMANCE; INTERNAL MODIFICATIONS; METAL ELECTRODES; METAL/SEMICONDUCTOR INTERFACE; OXIDATION STATE; POSITIVE BIAS; POST ANNEALING; SATURATION MOBILITY; SEMICONDUCTOR STRUCTURE; SUBTHRESHOLD SWING;

ATOMIC LAYER DEPOSITION; CARRIER CONCENTRATION; DEPOSITION; INTERNAL OXIDATION; PHASE INTERFACES; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

ANNEALING;

EID: 80052128564     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.05.048     Document Type: Article

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