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Volumn 31, Issue 4, 2010, Pages 326-328
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Self-aligned-gate ZnO TFT circuits
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Author keywords
Plasma enhanced atomic layer deposition (PEALD); Self aligned; Thin film transistors (TFTs); ZnO
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Indexed keywords
BACKSIDE EXPOSURE;
CHANNEL LENGTH;
GATE PROCESS;
HIGH-SPEED CIRCUITS;
PARASITIC CAPACITANCE;
PLASMA-ENHANCED ATOMIC LAYER DEPOSITION;
PROPAGATION DELAYS;
RING OSCILLATOR;
SELF-ALIGNED;
SEMICONDUCTOR CIRCUITS;
SUPPLY VOLTAGES;
TFT CIRCUITS;
ZNO;
ATOMIC LAYER DEPOSITION;
ATOMS;
DELAY CIRCUITS;
OSCILLATORS (ELECTRONIC);
PLASMA DEPOSITION;
SEMICONDUCTING ORGANIC COMPOUNDS;
THIN FILM CIRCUITS;
ZINC OXIDE;
THIN FILM TRANSISTORS;
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EID: 77950085717
PISSN: 07413106
EISSN: None
Source Type: Journal
DOI: 10.1109/LED.2010.2041424 Document Type: Article |
Times cited : (46)
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References (7)
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