Imposed layer-by-layer growth of ZnO on GaN/sapphire substrates using pulsed laser interval deposition

Thin Solid Films

Volumn 519, Issue 22, 2011, Pages 7683-7685

  Hirsch, Alexander ^a   Wille, Christian ^a   Bremers, Heiko ^a   Rossow, Uwe ^a   Hangleiter, Andreas ^a   Ludwig, Frank ^a   Schilling, Meinhard ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

In situ RHEED; Interval deposition; Pulsed laser ablation; Scanning electron microscopy atomic force microscopy; Thin films; Zinc oxide

Indexed keywords

ELECTRO-OPTICAL APPLICATIONS; GAN/SAPPHIRE; HIGH QUALITY; IN-SITU; IN-SITU RHEED; INTENSITY OSCILLATIONS; INTERVAL DEPOSITION; LAYER-BY-LAYER GROWTH; OXIDE SEMICONDUCTOR; SCANNING ELECTRONS; THIN FILM QUALITY; UV REGION; WIDE BAND GAP; ZNO;

ABLATION; ATOMIC FORCE MICROSCOPY; DEPOSITION; FILM THICKNESS; GALLIUM NITRIDE; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

PULSED LASERS;

EID: 80052118003     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.05.057     Document Type: Article

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