Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer

Applied Physics Letters

Volumn 91, Issue 12, 2007, Pages

  An, Sung Jin ^a   Yi, Gyu Chul ^a  

^a Department of Materials Science and Engineering   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; NANORODS; NANOSTRUCTURES; ZINC OXIDE;

CARRIER INJECTION; DOMINANT EMISSION PEAKS; FORWARD BIAS VOLTAGE; NEAR ULTRAVIOLET EMISSION;

LIGHT EMITTING DIODES;

EID: 34648812740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2786852     Document Type: Article

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