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Volumn , Issue , 2009, Pages

Physical insights on graphene nanoribbon mobility through atomistic simulations

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; GRAPHENE NANO-RIBBON; IONIZED IMPURITIES; LINE EDGE ROUGHNESS; OPTICAL PHONONS; SINGLE DEFECT;

EID: 77952418527     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424276     Document Type: Conference Paper
Times cited : (13)

References (15)
  • 2
    • 40049093097 scopus 로고    scopus 로고
    • Chemically Derived, ultrasmooth graphene nanoribbon semiconductors
    • X. Li et al., "Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors", Science, Vol.319, p. 1229, 2008.
    • (2008) Science , vol.319 , pp. 1229
    • Li, X.1
  • 3
    • 64549141075 scopus 로고    scopus 로고
    • Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices
    • Z. Chen and J. Appenzeller, "Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices", IEDM Tech. Digest, p. 509, 2008.
    • (2008) IEDM Tech. Digest , pp. 509
    • Chen, Z.1    Appenzeller, J.2
  • 4
    • 34547828973 scopus 로고    scopus 로고
    • Simulation of graphene nanoribbon field-effect transistors
    • G. Fiori et al., "Simulation of Graphene Nanoribbon Field-Effect Transistors", IEEE Electron Dev. Lett., Vol.28, p. 760, 2007.
    • (2007) IEEE Electron Dev. Lett. , vol.28 , pp. 760
    • Fiori, G.1
  • 5
    • 44149119344 scopus 로고    scopus 로고
    • Room-temperature all-semiconducting sub-10 nm Graphene nanoribbon field-effect transistors
    • X. Wang et al., "Room-Temperature All-Semiconducting Sub-10 nm Graphene Nanoribbon Field-Effect Transistors" Phys. Rev. Lett., Vol.100, p. 206803, 2008.
    • (2008) Phys. Rev. Lett. , vol.100 , pp. 206803
    • Wang, X.1
  • 6
    • 56349108496 scopus 로고    scopus 로고
    • Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering
    • T. Fang et al., "Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering" Phys. Rev. B, Vol.78, p. 205403, 2008.
    • (2008) Phys. Rev. B , vol.78 , pp. 205403
    • Fang, T.1
  • 7
    • 72849145940 scopus 로고    scopus 로고
    • A better understanding of the low-field mobility in Graphene Nano-ribbons
    • M. Bresciani et al., "A better understanding of the low-field mobility in Graphene Nano-ribbons", Proceedings ESSDERC'09, p. 480, 2009.
    • (2009) Proceedings ESSDERC'09 , pp. 480
    • Bresciani, M.1
  • 8
    • 77952354086 scopus 로고    scopus 로고
    • Code and Documentation can be found at the URL
    • Code and Documentation can be found at the URL: http://www.nanohub.org. tools/vides
  • 10
    • 33846833828 scopus 로고    scopus 로고
    • Density functional study of alkali metal atoms and monolayers on graphite (0001)
    • K. Rytkönen et al., "Density functional study of alkali metal atoms and monolayers on graphite (0001)", Phys. Rev. B, Vol.75, p. 075401, 2007.
    • (2007) Phys. Rev. B , vol.75 , pp. 075401
    • Rytkönen, K.1
  • 11
    • 3142715886 scopus 로고    scopus 로고
    • Assessment of room-temperature phonon-limited mobility in gated silicon nanowires
    • R. Kotlyar et al. "Assessment of room-temperature phonon-limited mobility in gated silicon nanowires", Appl. Phys. Lett., Vol.84, p.5270, 2004.
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 5270
    • Kotlyar, R.1
  • 13
    • 0001741343 scopus 로고
    • The quantum theory of emission and absorption of radiation
    • (London)
    • P. A. M. Dirac, "The Quantum Theory of Emission and Absorption of Radiation", Proc. Roy. Soc. (London), Vol.A 114 (767), p. 243-265, 1927.
    • (1927) Proc. Roy. Soc. , vol.A 114 , Issue.767 , pp. 243-265
    • Dirac, P.A.M.1
  • 14
    • 56549113551 scopus 로고    scopus 로고
    • Size dependence of surface-roughness-limited mobility in silicon-nanowire FETs
    • S. Poli et al., "Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs", IEEE Trans. Electron Devices, Vol.55, p. 2968-2976, 2008.
    • (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2968-2976
    • Poli, S.1
  • 15
    • 67249162996 scopus 로고    scopus 로고
    • Defect scattering in graphene
    • J.-H. Chen et al., "Defect Scattering in Graphene", Phys. Rev. Lett., Vol.102, p. 236805, 2009.
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 236805
    • Chen, J.-H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.